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Journal of Inorganic Materials

Journal of Inorganic Materials >

2006 , Vol. 21 >Issue 6: 1511 - 1514

DOI: https://doi.org/10.3724/SP.J.1077.2006.01511

Research Paper

Preparation of Li-N-H Codoped p-type ZnO Films

  • LU Yang-Fan ,
  • YE Zhi-Zhen ,
  • ZENG Yu-Jia ,
  • CHEN Lan-Lan ,
  • ZHU Li-Ping ,
  • ZHAO Bing-Hui
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  • (State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China)

Received date: 2006-01-06

  Revised date: 2006-02-27

  Online published: 2006-11-20

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Abstract

Li-N-H codoped p-type ZnO films were fabricated on glass substrates by DC reactive magnetron sputtering. X-ray diffraction, Hall-effect measurement, photoluminescence spectra and transmittance spectra were used to characterize the films. The results show that the codoped films are highly c-oriented with a p-type conduction, resistivity of 25.2Ω·cm, Hall mobility of 0.5cm2/(V·s), carrier density of 4.92×1017cm-3, and transmittance of about 90%.

Key words： p-type ZnO; magnetron sputtering; codoping

Cite this article

LU Yang-Fan , YE Zhi-Zhen , ZENG Yu-Jia , CHEN Lan-Lan , ZHU Li-Ping , ZHAO Bing-Hui . Preparation of Li-N-H Codoped p-type ZnO Films[J]. Journal of Inorganic Materials, 2006 , 21(6) : 1511 -1514 . DOI: 10.3724/SP.J.1077.2006.01511

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