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Journal of Inorganic Materials

Journal of Inorganic Materials >

2006 , Vol. 21 >Issue 5: 1230 - 1236

DOI: https://doi.org/10.3724/SP.J.1077.2006.01230

Research Paper

α-axis Oriented Bi4Ti3O12 Thin Films Deposited on Si(111) by Femtosecond Laser Ablation and Its Characteristic of I-V Curve

  • ZHOU You-Hua ,
  • ZHENG Qi-Guang ,
  • YANG Guang ,
  • LONG Hua ,
  • LU Pei-Xiang
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  • 1. State Key Laboratory of Laser Technology, Huazhong University of Science and Technology, Wuhan 430074, China, 2. Physics & Information School of Jianghan University, Wuhan 430056, China

Received date: 2005-10-10

  Revised date: 2006-01-13

  Online published: 2006-09-20

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Abstract

The polycrystalline Bi4Ti3O12 thin films were successfully prepared by femtosecond laser deposition on Si(111) wafers. X-ray diffraction (XRD) showed that Bi4Ti3O12 thin film was highly c-axis-oriented deposited at room temperature (20℃), but the film was highly a-axis-oriented deposited at 500circC. The remanent polarization (P r) and coercive force (Ec) of a-axis-oriented samples were measured to be 15μC/cm2 and 48kV/cm respectiovely. An equivalent circuit with distributed constants of Bi4Ti3O12/Si was introduced to interpret the relationship between the I-V characteristic curve and the ferroelectric hysteresis loop of Bi4Ti3O12 deposited on Si.

Key words： femtosecond; pulsed laser deposition; Bi4Ti3O12; ferroelectric

Cite this article

ZHOU You-Hua , ZHENG Qi-Guang , YANG Guang , LONG Hua , LU Pei-Xiang . α-axis Oriented Bi4Ti3O12 Thin Films Deposited on Si(111) by Femtosecond Laser Ablation and Its Characteristic of I-V Curve[J]. Journal of Inorganic Materials, 2006 , 21(5) : 1230 -1236 . DOI: 10.3724/SP.J.1077.2006.01230

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