The supported coupled-semiconductor of NiO-V2O 5/SiO2 was prepared by a chemical modification method. BET, TPR, XRD, Raman, TEM, IR and UV-vis DRS techniques were used to characterize the structure and light adsorption ability of NiO-V2O 5/SiO 2. The results show that, V2O 5 exists on the surface of silica as crystallite with the partical size about 10nm, Ni 2+ --O--V 5+ bond forms on the surface of NiO-V2O 5/SiO2, and NiO and V2O 5 on the surface of support can act on each other. On the one hand, NiO can promote the dispersion of V2O 5 on the surface of silica, which effectively prevents V2O 5 from aggregation, diminishes the size of crystallite, moreover, NiO can expand the light absorption ability of solid material, advances its utilization to light energy.
KONG Ling-Li
,
ZHONG Shun-He
. Structure and Light Absorption Ability of NiO-V2O 5/SiO 2
[J]. Journal of Inorganic Materials, 2006
, 21(5)
: 1203
-1208
.
DOI: 10.3724/SP.J.1077.2006.01203
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