TiNx films were prepared on Al2O3 substrates by laser chemical vapor deposition (LCVD). The effects of laser power (PL), pre-heatment temperature (Tpre) and total pressure in the main chamber (Ptot) on the orientation and deposition rate (Rdep) of TiNx films were investigated. The deposited TiNx films were characterized by Xray diffraction (XRD), atomic emission spectrometry (AES) and field emission scanning electron microscope (FESEM). The results showed that the composition in TiNx films was uniform, and the orientation was relative to the Tpre, which changed from (111) to (200) orientation with increasing Tpre. The orientation was consistent with its microstructure. The Rdep of TiNx films increased with increasing PL, showing a maximum (90μm/h) at PL = 100W at a deposition area of about 300mm2, which was higher than that of TiNx films prepared by other methods.
GONG Yan-Sheng
,
TU Rong
,
GOTO Takashi
. High-speed Deposition of Oriented TiNx Films by Laser Metalorganic Chemical Vapor Deposition[J]. Journal of Inorganic Materials, 2010
, 25(4)
: 391
-395
.
DOI: 10.3724/SP.J.1077.2010.00391
[1]Wagner J, Mitterer C, Penoy M, et al. The effect of deposition temperature on microstructure and properties of thermal CVD TiN coatings. International Journal of Refractory Metals & Hard Materials, 2008, 26 (2): 120-126.
[2]Shimada S, Takahashi M, Tsujino J, et al. Deposition and wear resistance of Ti-B-N-C coatings on WCCo cutting tools from alkoxide solutions by thermal plasma CVD. Surf. Coat. Tech., 2007, 201(16/17): 7194-7200.
[3]Bonitz J, Schulz S E, Gessner T. Ultra thin CVD TiN layers as diffusion barrier films on porous low-k materials. Microelectron. Eng., 2004, 76(1-4): 82-88.
[4]Shimada S, Takada Y, Tsujino J. Deposition of TiN films on various substrates from alkoxide solution by plasmaenhanced CVD. Surface & Coatings Technology, 2005, 199(1): 72-76.
[5]Yun J Y, Rhee S W. Effect of the carrier gas on the metalorganic chemical vapor deposition of TiN from tetrakisdimethylamidotitanium. Thin Solid Films, 1998, 320(2): 163-165.
[6]Borah S M, Pal A R, Bailung H, et al. Optimization of plasma parameters for high rate deposition of titanium nitride films as protective coating on bellmetal by reactive sputtering in cylindrical magnetron device. Applied Surface Science, 2008, 254(18): 5760-5765.
[7]Goto T. Thermal barrier coatings deposited by laser CVD. Surface & Coatings Technology, 2005, 198(1/2/3): 367-371.
[8]Ishihara S, Hanabusa M. Laserassisted chemical vapor deposition of titanium nitride films. J. Appl. Phys., 1998, 84(1): 596-599.
[9]Conde O, Silvestre A J. Laserassisted deposition of thin films from photoexcited vapour phases. Appl. Phys. A, 2004, 79(3): 489-497.
[10]Lópeza J M, GordilloVázquez F G, Bhme O, et al. Low grain size TiN thin films obtained by low energy ion beam assisted deposition. Applied Surface Science, 2001, 173(3/4): 290-295.
[11]Shin H K, Shin H J, Lee J G, et al. MOCVD of titanium nitride from a new precursor Ti[N(CH3)C2H5]4. Chemistry materials, 1997, 9(1): 76-80.
[12]Gong Y S, Tu R, Goto T. Microstructure and preferred orientation of titanium nitride films prepared by laser CVD. Materials Transactions, 2009, 50(8): 2028-2034.
[13]Patil P S, Chigare P S, Sadale S B, et al. Thicknessdependent properties of sprayed iridium oxide thin films. Mater.Chem. Phys., 2003, 80(3): 667-675.
[14]Pelleg J, Zevin L Z, Lungo S, et al. Reactivesputterdeposited TiN films on glass substrates. Thin Solid Film, 1991, 197(1/2): 117-128.
[15]Pangarov N A.On the crystal orientation of electrodeposited metals. Electrochem. Acta., 1964, 9: 721-726.
[16]Kim J S, Jun B H, Lee E J, et al. A comparative study on the properties of TiN films prepared by chemical vapor deposition enhanced by r.f. plasma and by electron cyclotron resonance plasma. Thin Solid Films, 1997, 292(1/2): 124-129.
[17]Raaijmakers I J, Vrtis R N, Sandhu G S, et al. Comparison of chemical vapor deposition of TiN using tetrakisdiethylaminotitanium and tetrakisdimethylaminotitanium. Proc. 1992 VLSI Multilevel Interconnect Conf., Santa Clara, CA, 1992:260.
[18]Sun S C, Tsai M H. Comparison of chemical vapor deposition of TiN using tetrakisdiethylaminotitanium and tetrakisdimethylaminotitanium. Thin Solid Films, 1994, 253(1/2): 440-444.