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Journal of Inorganic Materials

Journal of Inorganic Materials >

2010 , Vol. 25 >Issue 4: 391 - 395

DOI: https://doi.org/10.3724/SP.J.1077.2010.00391

Research Paper

High-speed Deposition of Oriented TiNx Films by Laser Metalorganic Chemical Vapor Deposition

  • GONG Yan-Sheng ,
  • TU Rong ,
  • GOTO Takashi
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  • 1. Engineering Research Center of Nano-geomaterials of Ministry of Education, School of Materials Science and Chemical Engineering, China University of Geosciences, Wuhan 430074, China; 2. Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

Received date: 2009-07-21

  Revised date: 2009-09-15

  Online published: 2010-04-27

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Abstract

TiNx films were prepared on Al2O3 substrates by laser chemical vapor deposition (LCVD). The effects of laser power (PL), pre-heatment temperature (Tpre) and total pressure in the main chamber (Ptot) on the orientation and deposition rate (Rdep) of TiNx films were investigated. The deposited TiNx films were characterized by Xray diffraction (XRD), atomic emission spectrometry (AES) and field emission scanning electron microscope (FESEM). The results showed that the composition in TiNx films was uniform, and the orientation was relative to the Tpre, which changed from (111) to (200) orientation with increasing Tpre. The orientation was consistent with its microstructure. The Rdep of TiNx films increased with increasing PL, showing a maximum (90μm/h) at PL = 100W at a deposition area of about 300mm2, which was higher than that of TiNx films prepared by other methods.

Key words： TiNx films; highspeed deposition; orientation; laser chemical vapor deposition (LCVD)

Cite this article

GONG Yan-Sheng , TU Rong , GOTO Takashi . High-speed Deposition of Oriented TiNx Films by Laser Metalorganic Chemical Vapor Deposition[J]. Journal of Inorganic Materials, 2010 , 25(4) : 391 -395 . DOI: 10.3724/SP.J.1077.2010.00391

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