Journal of Inorganic Materials >
Effects of the Porosity of the Source Materials on the Initial Growth of 6H-SiC Crystal
(1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China; 2. Graduate University of the Chinese Academy of Sciences, Beijing 100049, China; 3. Key Laboratory of Inorganic Coating Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China)
Received date: 2009-05-08
Revised date: 2009-06-29
Online published: 2010-02-20
The source materials with different porosity were be prepared by different loading ways. Effects of the porosity (porosity: 50%,55%,60%) of the source materials on the crystal growth rate and the crystal quality in the initial stage of SiC crystal growth were investigated respectively. It is found that crystal growth rate rises and the crystal quality declines with the increase of the porosity of the source materials. The temperature distribution and mass transport in the source materials (porosity: 50%, 55%, 60%) as well as the growth rate in the initial growth stage are simulated by the finite element method. The heat transfer inside the source material under the typical growth temperature bases on thermal radiation between SiC granulas. The simulations indicate that it takes the least time to reach stationary heat transfer for the source materials with 60% porosity and its growth rate in the initial growth stage is the largest among them. Therefore, the simulations explain the results of the growth experiments very well.
Key words： silicon carbide; growth rate; finite element method
LIU Xi
,
CHEN Bo-Yuan
,
CHEN Zhi-Zhan
,
SONG Li-Xin
,
SHI Er-Wei
. Effects of the Porosity of the Source Materials on the Initial Growth of 6H-SiC Crystal
[J]. Journal of Inorganic Materials, 2010
, 15(2)
: 177
-180
.
DOI: 10.3724/SP.J.1077.2010.00177
［1］Selder M, Kadinski L, Makarov Yu, et al. Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT. J. Cryst. Growth, 2000, 211(1-4): 333-338.
［2］Klein O, Philip P, Sprekels J, et al. Radiation- and convection-driven transient heat transfer during sublimation growth of silicon carbide single crystals. J. Cryst. Growth, 2001, 222(4): 832-851.
［3］Chen Q S, Zhang H, Prasad V. Heat transfer and kinetics of bulk growth of silicon carbide.J. Cryst. Growth, 2001, 230(1/2): 239-246.
［4］Nishizawa S, Michikawa Y, Kato T, et al. Stress analysis of SiC bulk single crystal growth by sublimation method. Mater. Sci. Forum, 2003, 433-436: 13-16.
［5］Liu X, Shi E W, Song L X, et al. Effects of graphitization of the crucible on silicon carbide crystal growth.J. Cryst. Growth, 2008, 310(19): 4314-4318.
［6］Heydemann V D, Rohrer G S, Sanchez E K, et al. The structural evolution of seed surfaces during the initial stages of physical vapor transport SiC growth. Mater. Sci. Forum, 1998, 264-268: 37-40.
［7］Mantzari A, Polychroniadis E K, Wollweberb J, et al. Defect status near the SiC/substrate interface: investigation of the first stage of the growth by physical vapour transport. J. Cryst. Growth, 2005, 275(1/2): e1813-e1819.
［8］Kitanin E L, Ramm M S, Ris V V, et al. Heat transfer through source powder in sublimation growth of SiC crystal. Mat. Sci. Eng. B,1998, 55(3): 174-183.
［9］Kulik A V, Bogdanov M V, Karpov S Y, et al. Theoretical analysis of the mass transport in the powder charge in long-term bulk SiC growth. Mater. Sci. Forum, 2004, 457-460: 67-70.
［10］Wellmann P J, Herro Z, Winnacket A, et al. In situ visualization of SiC physical vapor transport crystal growth. J. Cryst. Growth, 2005, 275(1/2): e1807-e1812.
［11］Wellmann P J, Herro Z, Sakwe S A, et al. Analysis of graphitization during physical vapor transport growth of silicon carbide. Mater. Sci. Forum, 2004, 457-460: 55-58.
［12］Wellmann P J, Bickermann M, Hofmann D, et al. On the origin of the below band-gap absorption bands in n-Type (N) 4H- and 6H-SiC. Mater. Sci. Forum, 2000, 338-342: 71-74.
/
| 〈 |
|
〉 |
