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Journal of Inorganic Materials

Journal of Inorganic Materials >

2009 , Vol. 24 >Issue 6: 1259 - 1262

DOI: https://doi.org/10.3724/SP.J.1077.2009.09217

Research Letter

A Transparent PN Junction Based on Tin-antimony Oxide Films

  • JI Zhen-Guo ,
  • ZHOU Rong-Fu ,
  • MAO Qi-Nan ,
  • HUO Li-Juan ,
  • CAO Hong
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  • (1. Institute of Electronic Information, Hangzhou Dianzi University, Hangzhou 310018, China; 2. State Key Laboratory for Silicon Materials, Zhejiang University, Hangzhou 310027, China)

Received date: 2009-03-31

  Revised date: 2009-06-17

  Online published: 2010-04-22

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Abstract

Transparent and semiconductive tin-antimony oxide (TAO) films were fabricated by reactive DC magnetron sputtering. According to the results of Hall effect measurement, TAO films are p-type for Sn/Sb atomic ratio in the range of 0.22-0.33, while TAO films with Sn/Sb atomic ratio out of this range are n-type. Optical band-gap measurement results show that the bandgap of all TAO films with various Sn/Sb ratios is almost identical (~3.91eV). Finally, a PN junction based on n-TAO and p-TAO was fabricated using ITO as the electrode for n-TAO and a thin layer of Cu as the electrode for p-TCO. It shows typical rectifying characteristics of a homo-junction diode since both types of TAO films have almost the same band-gap values.

Key words： transparent semiconductive films; antimony-tin oxide; PN junction

Cite this article

JI Zhen-Guo , ZHOU Rong-Fu , MAO Qi-Nan , HUO Li-Juan , CAO Hong . A Transparent PN Junction Based on Tin-antimony Oxide Films[J]. Journal of Inorganic Materials, 2009 , 24(6) : 1259 -1262 . DOI: 10.3724/SP.J.1077.2009.09217

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