A Transparent PN Junction Based on Tin-antimony Oxide Films

doi:10.3724/SP.J.1077.2009.09217

Abstract

Abstract: Transparent and semiconductive tin-antimony oxide (TAO) films were fabricated by reactive DC magnetron sputtering. According to the results of Hall effect measurement, TAO films are p-type for Sn/Sb atomic ratio in the range of 0.22-0.33, while TAO films with Sn/Sb atomic ratio out of this range are n-type. Optical band-gap measurement results show that the bandgap of all TAO films with various Sn/Sb ratios is almost identical (~3.91eV). Finally, a PN junction based on n-TAO and p-TAO was fabricated using ITO as the electrode for n-TAO and a thin layer of Cu as the electrode for p-TCO. It shows typical rectifying characteristics of a homo-junction diode since both types of TAO films have almost the same band-gap values.

Key words: transparent semiconductive films, antimony-tin oxide, PN junction

CLC Number:

JI Zhen-Guo,ZHOU Rong-Fu,MAO Qi-Nan,HUO Li-Juan,CAO Hong. A Transparent PN Junction Based on Tin-antimony Oxide Films[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2009.09217.

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