Ga-doped zinc oxide (ZnO:Ga) transparent conductive films were deposited on glass substrates by DC reactive magnetron sputtering. The influence of oxygen partial pressure on the structural, electrical and optical properties of ZnO:Ga films was investigated. The X-ray diffraction (XRD) studies show that the films are highly oriented with their crystallographic c-axis perpendicular to the substrate. The grain size of ZnO:Ga films is strongly dependent on the oxygen partial pressure. With the oxygen partial pressure increasing, the grain size of the films increases first, reaches a maximum at 0.30Pa and then decreases. As the oxygen partial pressure increases, the resistivity of ZnO:Ga films decreases gradually, reaches a minimum at 0.30Pa and then increases. The lowest resistivity of ZnO:Ga films obtained at the oxygen partial pressure of 0.30Pa is 3.50×10-4Ω·cm. The average transmittance of the ZnO:Ga thin films is over 90%.
MA Quan-Bao
,
YE Zhi-Zhen
,
HE Hai-Ping
,
ZHU Li-Ping
,
ZHANG Yin-Zhu
,
ZHAO Bing-Hui
. Effects of Oxygen Partial Pressure on the Properties of Transparent Conductive ZnO:Ga Films Prepared by DC Reactive Magnetron Sputtering[J]. Journal of Inorganic Materials, 2007
, 22(6)
: 1113
-1116
.
DOI: 10.3724/SP.J.1077.2007.01113
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