Research Paper

Influence of Mn-doping on the Structure and Optical Properties of ZnO Thin Film

  • SUN Bai ,
  • ZHAO Chao-Yang ,
  • XU Peng-Shou ,
  • Zhang Guo-Bin ,
  • WEI Shi-Qiang
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  • (National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China)

Received date: 2006-10-18

  Revised date: 2006-11-24

  Online published: 2007-09-20

Abstract

Highly c-axis oriented ZnO and Zn0.9Mn0.1O thin films were fabricated on Si substrates by pulsed laser deposition. Photoluminescence results show that Mn atoms doping induces the blue-shift of UV emission. At the same time, the intensity of UV emission decreases, while green emission increases. X-ray diffraction, X-ray absorption fine structure and X-ray photoelectron spectroscopy were employed to characterize the influence of Mn-doping on properties of ZnO thin films. The results indicate that Zn0.9Mn0.1O alloy forms after Mn doping in ZnO. Mn atoms enter into the ZnO crystal lattice and substitute Zn atoms with Mn2+ state. As a result, the band gap of Zn0.9Mn0.1O increases, which is associated with the UV emission blue-shift. Furthermore, the reaction between the doped Mn and interstitial Zinc atoms(Zni) prompts the decay of samples' crystallinity. Thus, interstitial Zinc atoms(Zni) decrease and the oxygen vacancy (VO) increases, showing the intensity weakening of the UV and violet emission, and the increasing of green emission of the film samples.

Cite this article

SUN Bai , ZHAO Chao-Yang , XU Peng-Shou , Zhang Guo-Bin , WEI Shi-Qiang . Influence of Mn-doping on the Structure and Optical Properties of ZnO Thin Film
[J]. Journal of Inorganic Materials, 2007
, 22(5) : 911 -916 . DOI: 10.3724/SP.J.1077.2007.00911

References

[1] Hu J H, Gordon R G. J. Electrochem. Soc., 1992, 139: 2014--2022.
[2] Barkers A, Crowther S, Rees D. Sensors Actuators A, 1997, 58: 229--235.
[3] Hamdani F, Yeadon M, Smith D J, et al. J. Appl. Phys., 1998, 83: 983--990.
[4] Hummer K. Phys. Stat. Sol. B, 1973, 56: 249--260.
[5] Dietl T, Ohno H, Matsukura F, et al. Science, 2000, 287: 1019--1022.
[6] Sato K, Katayama-Yoshida H. Physica E (Amsterdam), 2001, 10: 251--255.
[7] Gratens X, Bindilatti V, Oliveira N F, et al. Phys. Rev. B, 2004, 69: 125209--125220.
[8] Spaldin N A. Phys. Rev. B, 2004, 69: 125201--125207.
[9] Wang Q, Jena P. Appl. Phys. Lett., 2004, 84: 4170--4172.
[10] Jung S W, An S J, Yi G C, et al. Appl. Phys. Lett., 2002, 80: 4561--4563.
[11] Norton D P, Pearton S J, Hebard A F, et al. Appl. Phys. Lett., 2003, 82: 239--241.
[12] Sharma P, Gupta A, Rao K V, et al. Nat. Mater., 2003, 2: 673--677.
[13] Cong C J, Liao L, Li J C, et al. Nanotechnology, 2005, 16: 981--984.
[14] Chen Q W, Zhu D L, Zhang Y H. Appl. Phys. Lett., 2000, 77: 854--856.
[15] Wagner C D, Riggs W M, Davis L E, et al. Handbook of X-ray Photoelectron Spectroscopy. Perking-Elmer Corporation,Physical Electronics Division.
[16] Briggs D, Seah M P. Pratical Surface Analysis vol.1, 2ed.,Wiley, New York, 1993.
[17] Wan X H, Wei S Q. USTCXAFS Software Package,1999.
[18] Maiti U N, Ghosh P K, Nandy S, et al. Physica B: Condensed Matter, 2007, 387: 103--108. [DOI: 10.1016/j.physb.2006.03.090].
[19] Zhang H W, Shi E W, Chen Z Z, et al. J. Magn. Magn. Mater., 2006, 35 (2): 377--380. [DOI: 10.1016/j.jmmm.2006.01.108]
[20] 徐彭寿, 孙玉明, 施朝淑, 等, 中国科学 A, 2001, 31 (4): 358--365.
[21] Viswanatha R, Sapra S, Gupta S S, et al. J. Phys. Chem. B, 2004, 108: 6303--6310.
[22] Li J H, Shen D Z, Zhang J Y, et al. J. Lumin., 2007, 122-123: 352-354. [DOI: 10.1016/j.jlumin.2006.01.182]
[23] 孙 柏, 邹崇文, 刘忠良, 等(SUN Bai, et al). 无机材料学报(Journal of Inorganic Materials), 2006, 21 (4): 1005--1010.
[24] Mo C M, Li Y H, Lin Y S, et al. J. Appl. Phys., 1998, 83: 4389--4391.
[25] Borgohain K, Mahamuni S. Semicond. Sci. Technol., 1998, 13: 1154--1157.
[26] Mahamuni, S, Borgohain K, Bendre B S, et al. J. Appl. Phys., 1999, 85: 2861--2865.
[27] Wong E M, Searcon P C. Appl. Phys. Lett., 1999, 74: 2939--2941.
[28] Guo L, Yang S H, Yang C L. Appl. Phys. Lett., 2000, 76: 2901--2903.
[29] Studenikin S A, Golego N, Cocivera M. J. Appl. Phys., 1998, 84: 2287--2294.
[30] Haase M, Weller H, Henglein A. J. Phys. Chem., 1988, 92: 482--487.
[31] Spanhel L, Anderson M A. J. Am. Chem. Soc., 1991, 113: 2826--2833.
[32] Guo L, Yang S H, Yang C L, et al. Chem. Mater., 2000, 12: 2268--2274.
[33] Zhang X T, Liu Y C, Zhang J Y, et al. J. Cryst. Growth, 2003, 254: 80--85.
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