Adv. Search
Journal of Inorganic Materials

Journal of Inorganic Materials >

2007 , Vol. 22 >Issue 3: 519 - 523

DOI: https://doi.org/10.3724/SP.J.1077.2007.00519

Research Paper

Influence of Mn-Mg Co-doping on the Dielectric Properties of Barium Strontiun
Titanate Thin Film

  • ZHOU Qi-Gang ,
  • ZHAI Ji-Wei ,
  • YAO Xi
Expand
  • 1. Functional Materials Research Laboratory, Tongji University, Shanghai 200092, China; 2. Dept. of Physics & Electronic Information Science, Leshan Teacher’s College, Sichuan Leshan 614004, China

Received date: 2006-05-15

  Revised date: 2006-07-03

  Online published: 2007-05-20

Fold

Abstract

Undoped and Mn-Mg co-doped barium strontiun titanate (Ba0.25Sr0.75TiO3) thin films were deposited on Pt/Ti/SiO2/Si substrates by a sol-gel technique. X-ray diffraction (XRD) analysis and FE- SEM reveal that the films exhibite a pure perovskite phasestructure, uniform grain sizes and crack-fee. The dielectric constant, loss, tunability and leakage current density are 200, 0.010, 38%, 1×10 -5 A/cm 2, respectively, at a 1mol% Mn-Mg content. The improved BST thin films can be used for tunable microwave devices.

Key words： BST thin film; Mn-Mg co-doping; sol-gel; dielectric property

Cite this article

ZHOU Qi-Gang , ZHAI Ji-Wei , YAO Xi . Influence of Mn-Mg Co-doping on the Dielectric Properties of Barium Strontiun
Titanate Thin Film[J]. Journal of Inorganic Materials, 2007 , 22(3) : 519 -523 . DOI: 10.3724/SP.J.1077.2007.00519

References

[1] Wang Dan-Yang, Zhu Bai-Lin, Liu Tao, et al. J. Appl. Phys., 2006, 99 (084103): 1--6.
[2] Radhapiyari L, James A R, Thakur O P, et al. Materials Science and Engineering B, 2005, 117: 5--9.
[3] Kim J K, Kim S S, Kim W J, et al. Materials Letters, 2006, 60 (19): 2322--2325.
[4] Kim Kyoung-Tae, Kim Chang-Il. Surface & Coating Technology, 2006, 200 (16-17): 4708--4712.
[5] Zhu X H, Zheng D N, Peng W, et al. Materials Letters, 2006, 60: 1224--1228.
[6] Zheng Y B, Wang S J, Huan A C H, et al. J. Appl. Phys., 2006, 99 (014106): 1--4.
[7] Navi N, Horwitz J S, Auyeung R C Y, et al. Thin Solid Films, 2006, 510: 115--118.
[8] Cao L Z, Heng B L C, Wang S Y, et al. J. Appl. Phys., 2005, 98 (034106): 1--4.
[9] Kim Kyoung-Tae, Kim Chang-Il. Thin Solid Films, 2005, 472: 26--30.
[10] Sun Xiao-Hua, Guo Shi-Shang, Wu Geng-Zhu, et al. Journal of Crystal Growth, 2006, 290: 121--126.
[11] 鲍军波, 任天令, 刘建设, 等. 压电与声光, 2002, 24 (5): 389--391.
[12] Jain M, Majumder S B, Katiyar R S, et al. Appl. Phys. Lett., 2003, 82 (12): 1911--1913.
[13] Jain M, Majumder S B, Matinez A, et al. Integrated Ferroelectrics, 2002, 42: 343--355.
[14] Cole M W, Hubbard C, Ngo E, et al. J. Appl. Phys., 2002, 92 (1): 475--483.
[15] Joshi P C, Cole M W. Appl. Phys. Lett., 2000, 77: 289--291.
[16] 吴顺华, 陈力颖, 陈晓娟, 等. 硅酸盐学报(Journal of The Chinese Ceramic Society), 2001, 29 (1): 80--83.
[17] Cullity B D. Elements of X-ray Diffraction, second ed., Addisonwesley, Reading, MA, 1978.102.
[18] Johnson K M. J. Appl. Phys., 1962, 33 (9): 2826--2831.
Options
Outlines

/

〈 〉