Abstract:

The even single phase β-FeSi₂ thin films were prepared by femtosecond laser deposition on Si (100) and Si (111) wafers using a FeSi₂ alloy target. X-ray diffraction, field scanning electron microscope (FSEM), energy dispersive X-ray microanalysis (EDX), Fourier-transform Raman infrared spectroscope (FTRIS) were used to characterize the structure, composition, and properties of β-FeSi₂ films. The growth of β-FeSi₂ depends on the orientation of Si substrates. The photoluminescence from the grown single phase β-FeSi₂ thin film observed at room temperature (2℃) is at a wavelength of 1.53 μm. Raman peaks of β-FeSi₂ observed by an Raman microscope with 514.5nm argon laser are at 192.9cm^-1, 243.9cm^-1 and other positions.

Key words: β-FeSi2, femtosecond laser, pulsed laser deposition (PLD), photoluminescence.