Abstract: Polycrystalline Bi₄Ti₃O₁₂ thin films were successfully produced on p-Si substrates by sol-gel technique.
Effects of annealing temperature, annealing time, film thickness on the c-axis-oriented growth behavior, ferroelectric properties and leakage
current were studied. The results indicate that annealing temperatureshave remarkable influence on c-axis-oriented growth behavior with an
orientation factor of (00l) (F=(P-P₀)/(1-P₀)) from 0.081 at 550℃ to 0.827 at 850℃, and the annealing time has also influence on it.
Bi₄Ti₃O₁₂ thin films are highly c-axis-oriented over 750℃ of annealing temperature and the remanent polarization decreases with the
increase of the orientation factor of (00l). The leakage current densities of Bi₄Ti₃O₁₂ films increase with the ascending annealing temperature,
but the c-axise-oriented behavior helps to slow down the increase of the leakage current densities of Bi₄Ti₃O₁₂ films.

Key words: ferroelectric thin films, Bi₄Ti₃O₁₂, oriented growth, sol-gel technique