Progress in the Imaging of Nanoscale Ferroelectric Domain via Scanning Force Microscope

Abstract

Abstract: Scanning force microscope (SFM) is paid great attention as a super-resolutional near-field scanning probe microscope in all circles. SFM is becoming a powerful
technique with great potential for imaging and control of nanoscale domain structures in ferroelectric materials, and it is a promising technique well
suited for nanoscale investigation of local properties including ferroelectricity, piezoelectricity, dielectricity in ferroelectics. This review is involved with the
latest progress in the imaging principle of nanoscale ferroelectric domain via SFM.

Key words: nanoscale, ferroelectric domain, scanning force microscope

CLC Number:

TB34

ZENG Hua-Rong,FANG Jian-Wen,HUI Sen-Xing,LI Guo-Rong,YIN Qing-Rui. Progress in the Imaging of Nanoscale Ferroelectric Domain via Scanning Force Microscope[J]. Journal of Inorganic Materials.

References

[1] Scott J F, et al. Science, 1989, 246 (4935): 1400--1405.
[2] Miller P B. Phys. Rev., 1958, 111: 736--738.
[3] Sawoda A, Abe R. Jpn. J. Appl. Phys., 1967, 6: 699--702.
[4] Hatano J, Suda F. Ferroelectrics, 1978, 20: 256--260.
[5] Bihan R L, Maussion M. Ferroelectrics, 1973, 7: 364--368.
[6] Shakmano V V. Sov. Phys. of Solid States, 1973, 14: 2114--2118.
[7] Zhang B Y, Yin Q R. J. Appl. Phys., 1996, 80 (3): 1916--1918.
[8] 白春礼, 田芳, 罗克. 扫描力显微术, 北京: 科学出版社, 2000. 7--8.
[9] Binnig G, Quate C F, Gerber Ch. Phys. Rev. Lett., 1986, 56: 930--933.
[10] Martin Y, Williams C C, Wickramasinghe H K. J. Appl. Phys., 1987, 61 (10): 4723--4729.
[11] Meyer G, Am N. Appl. Phys. Lett., 1990, 57 (20): 2089--2091.
[12] Martin Y, Abraham D W, Wickramasinghe H K. Appl. Phys. Lett., 1988, 52 (13): 1103--1105.
[13] Martin Y, Wickramasinghe H K. Appl. Phys. Lett., 1987, 50 (20): 1455--1457.
[14] Hartmann U. Annu. Rev. Mater. Sci., 1999, 29: 53--87.
[15] Nonnenmacher M, O’Boyle M P, Wickramasinghe H K. Appl. Phys. Lett., 1991, 58 (25): 2921--2923.
[16] Fujihira M. Annu. Rev. Mater. Sci., 1999, 29: 353--380.
[17] Wickramasinghe H K. Acta. Mater., 2000, 48: 347--358.
[18] Landman U, Luedtke W D, Burnham N A, et al. Science, 1990, 248 (4954): 454--461.
[19] Erlandsson R, McClelland G M, et al. J. Vac. Sci. Technol., 1988, A6 (2): 266--270.
[20] Hobbs P C D, Ahraham D W, WichramAsinghe H K. Appl. Phys. Lett., 1989, 55 (22): 2357--2359.
[21] Schonenberger C, Alvarado S F. Z. Phys., 1990, B80: 373--377.
[22] Rugar D, Mamin H J, Guethner P, et al. J. Appl. Phys., 1990, 68 (3): 1169--1183.
[23] Sanrenbach F, Terris B D. Appl. Phys. Lett., 1990, 56: 1703--1705.
[24] Luthi R, Haefke H, Meyer K P. J. Appl. Phys., 1993, 74 (12): 7461--7470.
[25] Abplanalp M, Eng L M, Gunter P. Appl. Phys., 1998, A66: S231--234.
[26] Eng L M, Bammerlin M, Loppacher Ch. Applied Surface Science, 1999, 140: 253--258.
[27] Lehnen P, Dec J, Kleemann W. J. Phys. D: Appl. Phys., 2000, 33: 1932--1936.
[28] Luthi R, Haefke H, Meyer K P. Surf. Sci., 1993, 285 (12): L498--L502.
[29] Eng L M, Fousek J. Ferroelectrics, 1997, 191: 211--218.
[30] Gruverman A L, Kolosov O V, Hatano O V. J. Vac. Sci. Technol., 1995, B13 (3): 1095--1099.
[31] Bluhm H, Schwaro U D, Meyer K P. Appl. Phys., 1995, A61 (5): 525--533.
[32] Wiesendanger R. Scanning Probe Microscopy and Spectroscopy: Methods and Applications, University Press, Cambridge, 1994. 291.
[33] Makatani N. Jpn. J. Appl. Phys., 1979, 18 (3): 491--505.
[34] Jona F, Shirane G. Ferroelectric crystals, Pergamon Press, Oxford, 1962. 162--163.
[35] Bluhm H, Wiesendanger R, Meyer K P. J. Vac. Sci. Technol., 1996, B14: 1180--1183.
[36] Gruverman A L, Hatano L, Tokumoto H. Jpn. J.Appl. Phys., 1997, 36 (4): 2207--2211.
[37] Correia A, Massanell J, Garcia N, et al. Appl. Phys. Lett., 1996, 68 (20): 2796--2798.
[38] Kwik B S, Erbil A, Budni J D, et al. Phys. Rev., 1994, B49 (14): 865.
[39] Gruverman A L, Auciello O, Tokumoto H. Integrated Ferroelectrics, 1998, 19: 49--83.
[40] Guthner P, Dransfeld K. Appl. Phys. Lett., 1992, 61 (9): 1137--1139.
[41] Franke K, Besold J, Haessler W, et al. Surf. Sci. Lett., 1994, 302 (1/2): L283--L288.
[42] Gruverman A L, Auciello O, et al. Ferroelectrics, 1996, 184: 11--20.
[43] Ahn C H, Tybell L, Antognazza K, et al. Science, 1997, 276 (16): 1100--1103.
[44] Christman J A, Kim S H, Maiwa H, et al. J. Appl. Phys., 2000, 87 (11): 8031--8034.
[45] Xie Z, Luo E Z, Xu J B, et al. Appl. Phys. Lett., 2000, 76 (14): 1923--1925.
[46] Abplanalp M, Eng L M, Gunter P. Appl. Phys., 1998, A66: S231--S234.
[47] Gruverman A L,. Auciello O, Tokumoto H T. J. Vac. Sci. Technol., 1996, B14 (2): 602--605.
[48] Gruverman A L,. Auciello O, Tokumoto H T. Annu. Rev.Sci., 1998, 28: 101--123.
[49] Hong J W, Noh K H, Park S I. Phys. Rev., 1998, B58 (8): 5078--5084.
[50] Lee K. Jpn. J. Appl. Phys., 1999, 38 (3A): L264--L266.