Hysteresis Loops Characteristics of Bi4Ti3O12 Ferroelectric Thin Films with Different Configuration on Si Substrates

Abstract

Abstract: In order to fabricate high quality ferroelectric thin films qualified for ferroelectric memories, different ferroelectric thin film systems, with the structures of MFM and MFS, were deposited by using the sol-gel technique. The ferroelectric properties and the P-V hysteresis loops characteristics of these different ferroelectric thin film systems were analyzed with comparison. Based on the test results, a new practicable configuration of Ag/Pb(Zr_0.52Ti_0.48)O₃/ Bi₄Ti₃O₁₂/p-Si was fabricated, which can improve the ferroelectric properties and hysteresis loops characteristics of the ferroelectric thin films.

Key words: ferroelectric thin films, P-V hysteresis loops characteristics, sol-gel method

CLC Number:

TN304

WANG Hua. Hysteresis Loops Characteristics of Bi₄Ti₃O₁₂ Ferroelectric Thin Films with Different Configuration on Si Substrates[J]. Journal of Inorganic Materials.

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Hysteresis Loops Characteristics of Bi₄Ti₃O₁₂ Ferroelectric Thin Films with Different Configuration on Si Substrates

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