Journal of Inorganic Materials

• Research Paper • Previous Articles     Next Articles

Fabrication of n-type Bismuth-Tellurium Nanowire Array Thermoelectric Materials by Electrodeposition Technology

WANG Wei1; ZHANG Wei-Ling1; WANG Hui2; TAO Shong1; ZHANG Jian-Zhong3   

  1. 1. School of Chemical Engineering and Technology; Tianjin University; Tianjin 300372; China; 2. Analysis Center of Tianjin University; Tianjin 300072, China; 3. Tianjin Institute of Power Source; Tianjin 300072, China
  • Received:2002-11-04 Revised:2002-12-09 Published:2004-01-20 Online:2004-01-20

Abstract: The electrodeposition process of bismuth-tellurium co-deposition was studied, and the effects of temperature and HNO3 concentration on the co-deposition process were also analyzed. Based on the work, n-type bismuth-tellurium nanowire array thermoelectric materials were fabricated through DC electrodeposition by using anodic alumina template with a pore diameter of 50nm as the cathode. The results show that electrodeposition potential has great effect on the compositon of bismuth-tellurium alloy.

Key words: bismuth-tellurium thermoelectric material, nanowire array, electrodepositionbb

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