Journal of Inorganic Materials

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Structure Properties of MgxZn1-xO Films

ZHANG Xi-Jian, MA Hong-Lei, WANG Qing-Pu, MA Jin   

  1. School of Physics and Microelectronics, Shandong University, Jinan 250100, China
  • Received:2005-01-05 Revised:2005-02-23 Published:2006-01-20 Online:2006-01-20

Abstract: MgxZn{1-xO films (x=0.23) were prepared on silicon substrates by radio frequency magnetron sputtering at 80℃. The structure properties of MgxZn1-xO films were
studied by using XRD, HRTEM, Raman spectra and AFM. The analyses of XRD and HRTEM indicate that the MgxZn1-xO films have hexagonal wurtzite
single-phase structure and a preferred orientation with c axis perpendicular to the substrates. The lattice constants of MgxZn1-xO films are similar to those of ZnO films. Raman spectra of ZnO and MgxZn1-xO films reveal
that the MgxZn1-xO films have not only hexagonal wurtzite structure, but also higher crystalline quality than ZnO films. AFM image indicates
that the MgxZn1-xO films are polycrystalline.

Key words: MgxZn1-xO, radio frequency magnetron sputtering, structure properties

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