Abstract: The solid material of coupled semiconductor WO₃-TiO₂, was prepared by a sol-gel method. The photocatalyst WO₃-TiO₂ supported metallic Cu was prepared by an isovolumic impregnation method. The surface structure, particle size and photo absorption performance of the materials were characterized by XRD, Raman, TPR, IR, TEM, XPS and UV-Vis. The experiment results show that 10wt%WO₃ disperses on the surface of TiO₂ support with one monolayer of non-crystalline phase, average particle size of 1wt%Cu/10wt%WO₃-TiO₂ is about 15nm. Blue shifting of photo absorption edges is observed clearly after the addition of WO₃ on the surface of TiO₂. The lattice WO₃ forms and photo absorption performance decreases when the supporting amount of WO₃ is more than that of the monolayer phase(>10wt%). The formation of bond W-O-Ti in the solid systems promotes the transfer of generating charge carriers between WO₃ and TiO₂. Loaded metalic Cu accelerates the transformation from the tetrahedrally coordinated W species to the octahedrally coordinated W species.

Key words: coupled semiconductor, photocatalyst, material structure, photo absorption performance