Effect of ZrO2 Dopant on the Electrical and Gas Sensing Properties of SnO2 Thin Films Prepared by the Sol-Gel Technique

Journal of Inorganic Materials

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Effect of ZrO₂ Dopant on the Electrical and Gas Sensing Properties of SnO₂ Thin Films Prepared by the Sol-Gel Technique

FANG Guojia; LIU Zuli; ZHANG Jie¹; YAO Kailun^2,3

Department of Physics; Huazhong Univ. of Sci.Tech. Wuhan 430074 China; ¹Department ofMaterials Science; Huazhong Univ. of Sci.Tech. Wuhan 130074 China; ²International Center for Material Physics; Academic Sinica Shenyang 110015 China; ³CCAST(World Lab.), P.O. Box 8730 Beijing 100080 China

Received:1995-12-25 Revised:1996-02-12 Published:1997-02-20 Online:1997-02-20

Abstract

Abstract: SnO₂(ZrO₂) thin films with different dopant concentrations were deposited on soda-glass sheets by the Sol-Gel technique, using non-alkoxide SnCl₂.2H₂O as main precursor, Zr(OC₃H₇)₄ as dopant, ethanol as solvent. The effect of ZrO₂ dopant concentration on the efectrical and gas sensing was studicd. We found that the ZrO₂-SnO₂ thin films prepared by this method havc very good gas sensitivity, excellent selectivity, rapid rcspionse and recovery behaviour to H₂S at room temperature

Key words: ZrO₂ doped SnO₂ thin films, Sol-Gel technique, ZrO₂ dopant concentration, electrical and gas sensing properties

FANG Guojia,LIU Zuli,ZHANG Jie,YAO Kailun. Effect of ZrO₂ Dopant on the Electrical and Gas Sensing Properties of SnO₂ Thin Films Prepared by the Sol-Gel Technique[J]. Journal of Inorganic Materials.

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Effect of ZrO₂ Dopant on the Electrical and Gas Sensing Properties of SnO₂ Thin Films Prepared by the Sol-Gel Technique

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