Abstract:

Using infrared transimissing, airman scattering, and X-ray diffraction spectroscopy, the authors investigated the effect of annealing temperature on the structure of amorphous hydrogenatedsilicon carbide (a-SiC:H) films prepared by the reactive sputtering method. It is found that annealing at temperature up to 800℃ results in evacuation of hydrogen atoms. Moreover, the annealingtemperature corresponding to the evacuation of H atom from CH_nbonds is higher than thatof R evacuation from SiH_n bonds. The annealing produces structural rearrangements, and the amorphous phase begins to transform into the microcrystalline phase at approximate 800℃.

Key words: high-temperature annealing, reactive-sputtering, a-SiC:H flms, structural rearrangement