Journal of Inorganic Materials

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Vacuum Annealing and in-Situ XPS Measurement of Oxidized Sn Films

YAN Hui; MA Li-Jun; CHEN Guang-Hua; WONG Sei-Ping1; MAN Wah-Kit1; KWOK Wei-Man2   

  1. Department of Applied Physics; Beijing Polytechnic University Beijing 100022 China; Department of Electronic Engineering1 Departement of Chemistry2; the Chinese Univcrsity of Hongkon, Shatin, Hongkong China
  • Received:1997-01-27 Revised:1997-03-07 Published:1998-02-20 Online:1998-02-20

Abstract: The dependence of chemisitry properties of elements Sn and O on the surface of oxidized Sn films on vacuum annealing was studied. By using in-situ
measurements of X-ray photoelectron spectroscopy (XPS), it was found that great number of negatively charged particles (such as O- and O-2) were adsorbed on the
surface. The amount of the adsorbed oxygen particles increased with the annealing temperature (Tann), and then the adsorbed oxygen particles became less charged. The
increase in the number of the adsorbed oxygen particles is attributed to the transition from SnO_2 to Sn2O3 as Tann≤350℃. At 350≤Tann≤400℃,
the relative content of Sn in metallic Sn phase increased suddenly with Tann due to the transition from Sn3+ to Sn^0, which resulted in releasing and successively piling up of O particles adsorbed on
the surface. Moreover, SnO2 became more stable than Sn2O3 in the case of higher annealing temperauters, as say Tann≤350℃. The adsorbed states of the oxygen
particles on the surface and the correlation between the adsorbed states and annealing temperature were also discussed.

Key words: oxidized Sn film, vacuum annealing, in-situ XPS measurements

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