Journal of Inorganic Materials

• Research Paper • Previous Articles     Next Articles

Giant Magnetoresistance Effect in La-Pb-Mn-O Polycrystalline Bulk Materials

ZHU Xiang-Rong1; SHEN Hong-Lie1; SHEN Qin-Wo1; ZOU Shi-Chang1; Tsukamoto Koichi2; Yanagisawa Takeshi2; Ito Toshimitsu2; Higuchi Noboru2; Okada Yasumasa2; Okutomi Mamoru2   

  1. 1. State Key Laboratory of Functional Materials for Informatics; Shanghai Institute of Metallurgy; Chinese Academy of Sciences, Shanghai 200050, China; 2. Electrotechnical Latoratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8565, Japan
  • Received:1998-12-29 Revised:1999-01-26 Published:1999-12-20 Online:1999-12-20

Abstract: Cubic polycrystalline bulk materials of La-Pb-Mn-O were prepared by solid state reaction method. Magnetic measurements indicated that the
samples are ferromagnetic, and TC is 257K. Magnetotransport measurements showed that the metal-semiconductor transition temperature (Tp of
the samples is 251K, and near Tp the giant magnetoresistance (GMR) peak values reach 72% and 85% under 5T and 13T magnetic field, respectively. It was noticed that the samples present GMR effect over a wide temperature
range from 77K to room temperature. The GMR effect is related to the behavior of the spin polaron, which is affected by both temperature and applied field.
Besides the influence of the spin polaron, the GMR peak effect near Tp is also ascribed to the strong decline of spin-disorder scattering of carriers
caused by the applied field. Furthermore, the GMR effect over the whole measured temperature, especially at low temperatures far below Tp, is also
resulted from the spin-dependent scattering of carriers near grain boundary associated with the polycrystallinity of the samples. In addition, the
inhibition of the spin-polarized intergrain tunneling at Tp leads to the disappearance of the low-lield GMR effect caused by the Hund exchange.

Key words: GMR, metal - semiconductor transition temperature, polycrystalline

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