Preparation and Structure of Nano-crystalline WO3(Si) Thin Films by Pulsed Excimer Laser Deposition

Journal of Inorganic Materials

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Preparation and Structure of Nano-crystalline WO₃(Si) Thin Films by Pulsed Excimer Laser Deposition

FANG Guo-Jia^1,2; LIU Zu-Li¹; YAO Kai-Lun^1,3

1. National Lab. of Laser Technology and Department of Physies; Huazhong Univ. of Sci. &Tech.; Wuhan 430074; China; 2. Department of Physics; Xiangfan Univ.; Xiangfan 441053, China; 3. International Center for Material Physics, Chinese Academy of Sciences, Shenyang 110015, China

Received:2000-12-28 Revised:2001-04-03 Published:2002-01-20 Online:2002-01-20

Abstract

Abstract: WO_xthin films were successfully synthesized on Si (111) substrate at different conditions by using scanning excimer laser ablation technique. The structure of WO_x thin films deposited
at different conditions was analyzed by STEM, XRD, RS. The thin films deposited at 300 and 400℃ under 20Pa oxygen pressure showed nano-crystalline triclinic structure.
The experimental results illustrate that the oxygen pressure and the deposition temperature are two important parameters for determining the
structure and chemical composition of the synthesized thin films.

Key words: WO₃ thin films, nano-crystalline, PLD technique, structural analyses, preparation conditions, Si （111）

CLC Number:

O484

FANG Guo-Jia,LIU Zu-Li,YAO Kai-Lun. Preparation and Structure of Nano-crystalline WO₃(Si) Thin Films by Pulsed Excimer Laser Deposition[J]. Journal of Inorganic Materials.

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Preparation and Structure of Nano-crystalline WO₃(Si) Thin Films by Pulsed Excimer Laser Deposition

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