Journal of Inorganic Materials

• Research Paper • Previous Articles    

X-ray Photoelectron Spectroscopy Studies of ITO Thin Films

CHEN Meng; PEI Zhi-Liang; BAI Xue-Dong; HUANG Rong-Fang; WEN Li-Shi   

  1. Institute of Metal Research; Chinese Academy of Sciences; Shenyang 110015; China

  • Received:1999-02-11 Revised:1999-05-24 Published:2000-02-20 Online:2000-02-20

Abstract: The chemical states of In, Sn and O in Sn-doped In2O3 films were investigated byusing X-ray photoelectron spectroscopy. The results indicate that Sn and In respectively exist ina same chemical state for both as-deposited and post-annealed films. Two types of O2- ions, OI and OII, can be distinguished by Gaussian simulation. OI has a binding energy of 529.90±0.30 eVwhich is in oxygen sufficient region, and OII has a binding energy of 531.40±0.2 eV which is inoxygen deficient regions. Oxygen deficient regions mainly exist in the surface layer.

Key words: chemical state, XPS, Gaussian simulation

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