Technology of Preparing Diamond Wire Cut Multicrystalline Silicon Wafer Texture Surfac

doi:10.15541/jim20160664

Abstract

Abstract:

The texturization technology of multicrystalline silicon wafers is the key step of solar cell manufacture. Based on the acid etching technology widely used in industrial-scale manufacture, the influence of etching time and the components concentration of etching solution on the structure of texturization surface and reflectivity were investigated. In addition, the metal-catalyzed chemical etching technology was used to process the texture surface. The etching solution used in this method consists of hydrofluoric acid (HF) and silver nitrate (AgNO₃). At the same time, the texture surface and reflectivity of silicon wafers etched by these two technologies were compared to select the ideal texture surface with uniform structure and low reflectivity. The results show that the best texture surface structure and reflectivity can be obtained under following reaction conditions: concentrations of HF and AgNO₃ of 4.6 mol/L and 0.02 mol/L, respectively, reaction time of 90 min, and room temperature. The average reflectivity of silicon wafer after etching in this condition is 8 %, which is far lower than that by traditional method in current industry.

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Key words: diamond wire-sawing, multicrystalline silicon, texturization, reflectivity

CLC Number:

TM914

WU Xiao-Wei, LI Jia-Yan, TAN Yi. Technology of Preparing Diamond Wire Cut Multicrystalline Silicon Wafer Texture Surfac[J]. Journal of Inorganic Materials, 2017, 32(9): 985-990.

Figures/Tables 10

Fig. 1 SEM images of noncorrosive slurry cut (a) and diamond wire cut (b) multicrystalline silicon wafer surfaces

Fig. 2 SEM images of multicrystalline silicon wafer surface after etching at room temperature in the solution with HF: HNO3: H2O = 1︰5︰3 for 130 s (a), 180 s (b) and 280 s (c)

Fig. 3 Reflectivity curves of multicrystalline silicon wafer after etching at room temperature in the solution with HF: HNO3: H2O = 1︰5︰3 for different time

Fig. 4 SEM images of multicrystalline silicon wafer surface after etching at room temperature in the solution with different volume ratios of HF, HNO3 and H2O (1: 5: 3(a), 2: 5: 3(b) and 3: 5: 3(c)) for 130 s

Fig. 5 Reflectivity curves of multicrystalline silicon wafer surface after etching with different volume ratios of HF, HNO3 and H2O at room temperature for 130 s

Fig. 6 SEM images of multicrystalline silicon wafer surface after etching at room temperature in the solution with different volume ratios of HF, HNO3 and H2O(1: 5: 3 (a), 1: 6: 3 (b), 1: 8: 3 (c) and 1: 10: 3 (d)) for 130 s

Fig. 7 Reflectivity curves of multicrystalline silicon wafer surface after etching at room temperature in the solution with different volume ratios of HF, HNO3 and H2O for 130 s

Fig. 8 SEM images of multicrystalline silicon wafer surface after etching at room temperature in the solution with HF and AgNO3 concentration of 4.6 mol/L and 0.02 mol/L for 30 min (a), 60 min (b) and 90 min (c)

Fig. 9 Reflectivity curves of multicrystalline silicon wafer after etching by metal-catalyzed chemical etching technology at room temperature for different time

Fig. 10 Comparison of the most optimal reflectivity curve for the multicrystalline silicon wafer prepared at different conditions

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