Abstract: Although the Lu₂Si₂O₇∶Ce(LPS∶Ce) has a high light yield about 26000ph/MeV, the LPS∶Ce crystals grown by Czochralski(Cz) process usually display a low light yield. In present work, annealing treatments in different conditions were carried out on Cz grown LPS∶Ce with low luminescence efficiency, in order to investigate the effect of annealing treatment conditions on scintillation properties of LPS∶Ce, such as luminescence efficiency, absorption spectrum. It is found that annealing in argon atmosphere has a negligible effect on the scintillation properties of LPS∶Ce; annealing in air can dramatically improve the luminescence efficiency of LPS∶Ce. The optimized annealing mechanism is determined through the comparison between different annealing treatment: atmosphere of air; annealing temperature of 1400℃; annealing time depending on the dimension of the sample. The larger dimension is the longer annealing time. The change trend of charge transfer band in the absorption spectrum and UV-ray excitation and emission property of LPS∶Ce crystal are also discussed.

Key words: LPS∶Ce crystal, annealing mechanism, luminescence efficiency, absorption spectrum, emission spectrum