Journal of Inorganic Materials

• Research Paper • Previous Articles    

Poisoning Phenomenon on the Surface of ITO Target During DC-Magnetron Sputtering Process

KONG Wei-Hua   

  1. Ningxia Special Materials Key Laboratory; Northwest Institute of Rare Metal Materials; Ningxia 753000; China
  • Received:2001-08-13 Revised:2001-09-30 Published:2002-09-20 Online:2002-09-20

Abstract: The poisoning phenomenon on the surface of ITO target during DC-Magnetron sputtering process was investigated. XRD, EPMA and LECO oxygen analyzer were used to study the poisoning mechanism and the factors leading to poisoning were analyzed. The result shows that In2O3 is decomposed into In2O and O2. This reaction on the surface of ITO target is the reason causing the poisoning phenomenon.

Key words: DC-magnetron sputtering, ITO target, poisoning phenomenon

CLC Number: