Journal of Inorganic Materials ›› 2021, Vol. 36 ›› Issue (2): 188-196.DOI: 10.15541/jim20200268

Special Issue: 【信息功能】纪念殷之文先生诞辰105周年虚拟学术专辑

• RESEARCH PAPER • Previous Articles     Next Articles

Twisted Growth, Component Segregation and Characteristics of Gd3(Al,Ga)5O12:Ce Scintillation Crystal

MENG Meng1,2,3(), QI Qiang1,4, DING Dongzhou1,5(), HE Chongjun2,3(), ZHAO Shuwen1, WAN Bo1, CHEN Lu1, SHI Junjie1,5, REN Guohao1,5   

  1. 1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China
    2. Key Laboratory of Space Photoelectric Detection and Perception, Ministry of Industry and Information Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
    3. College of Astronautics, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
    4. School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
    5. Fujian Institute of Innovation, Chinese Academy of Sciences, Fujian 350002, China
  • Received:2020-05-15 Revised:2020-08-03 Published:2021-02-20 Online:2020-09-09
  • About author:MENG Meng(1994-), male, Master candidate. E-mail: 865770183@qq.com
  • Supported by:
    National Natural Science Foundation of China(61675095);Project of “Key Technical Talents of the Chinese Academy of Sciences”(Y74YQ3130G);Key Project of Science and Technology Innovation of Shanghai Institute of Ceramics of Chinese Academy of Sciences(Y74ZC5152G);Independent Deployment Project of Hercynian Research Institute(FJCXY18040202)

Abstract:

There are many problems such as polycrystal twisted growth and component segregation during the preparation of the new scintillation crystal Gd3(Al,Ga)5O12:Ce (abbreviated as GAGG:Ce) by the Czochralski method. In order to solve these problems to obtain large-size and high-quality GAGG:Ce crystals, with a combination of melt characteristics, formation mechanism of twisted growth, component segregation, spectral characteristics and scintillation performance of GAGG:Ce crystals were studied. A complete GAGG:Ce crystal with size of ?50 mm× 120 mm was successfully grown by adjusting the temperature field and inhibiting the volatilization of the components. The results show that light output of the GAGG:Ce crystal sample (10 mm×10 mm×2 mm) is 58000 ph./MeV, while energy resolution is 6.4%@662 keV with transmittance at 550 nm of 82%, decay time of 126 ns (83%), and the slow component is 469 ns (17%). The peak position of emission wavelength of the crystal is about 550 nm, which matches well with the silicon photomultiplier. Meanwhile, the emission weighted longitudinal transmittance is as high as 79.8%. GAGG:Ce crystal has an excellent combination of high light output and energy resolution, and all of these properties show that GAGG:Ce crystal is a promising scintillator for neutron and gamma detection applications.

Key words: polycrystal twisted growth, temperature gradient, component segregation, decay time

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