Trace SiO2 Addition on Optical and Scintillation Property of Pr:Lu3Al5O12 Ceramics

doi:10.15541/jim20190418

Abstract

Abstract:

Sintering aids are widely used to improve the optical quality of ceramics in the preparation of transparent ceramics. However, sintering aids may deteriorate the luminescent properties of the ceramics. In this work, 0.25at%Pr:LuAG scintillation ceramics were prepared by vacuum pre-sintering combined with hot isostatic pressing. The influences of trace SiO₂ sintering aid on the optical and scintillation properties of the ceramics were studied. The results show that a small amount of SiO₂ below 200 ppm (1 ppm means that addition content is 1×10^-6 g/g) can effectively promote the remove of pore during hot isostatic pressing and improve the optical quality of the Pr:LuAG ceramics. Their in-line transmittance with 150 ppm SiO₂ is about 77% at 400 nm. The effects of pre-sintering temperature and holding time on the optical properties of Pr:LuAG ceramics were also investigated. When completely closed pore structure is formed, further increasing the pre-sintering temperature or prolonging the holding time reduce the densification rate in the hot isostatic pressing process, which is not conducive to the remove of pores and lower the optical quality of the Pr:LuAG ceramics. In addition, trace SiO₂ addition has less effect on scintillation properties of the Pr:LuAG ceramics. Adding trace SiO₂ sintering aid combined with hot isostatic pressing is an effective way to prepare Pr doped garnet scintillation ceramics.

Key words: Pr:LuAG ceramics, sintering aids, optical quality, scintillation property

CLC Number:

TQ174

HU Zewang,CHEN Xiaopu,LIU Xin,LI Xiaoying,SHI Yun,KOU Huamin,XIE Tengfei,LI Jiang. Trace SiO₂ Addition on Optical and Scintillation Property of Pr:Lu₃Al₅O₁₂ Ceramics[J]. Journal of Inorganic Materials, 2020, 35(7): 796-802.

Figures/Tables 12

Fig. 1 Relative densities of the Pr:LuAG ceramics with different SiO2 additives pre-sintered at different temperatures for 5 h

Fig. 2 Grain size of the Pr:LuAG ceramics before and after HIP with different SiO2 additives pre-sintered at different temperatures for 5 h

Fig. 3 FESEM images of the thermally etched Pr:LuAG ceramics with different SiO2 additives pre-sintered at 1775 ℃ for 5 h (a) 0; (b) 50 ppm; (c) 100 ppm

Fig. 4 In-line transmittance of the HIPed Pr:LuAG ceramics pre-sintered at 1775 ℃ for 5 h with different SiO2 additives

Fig. 5 FESEM images of the thermally etched surface (a-d) and fracture surface (e) of the HIPed Pr:LuAG ceramics with different SiO2 additives pre-sintered at 1775 ℃ for 5 h (a) 0 ppm; (b) 50 ppm; (c) 100 ppm; (d) 200 ppm; (e) 200 ppm

Fig. 6 FESEM images of the thermally etched Pr:LuAG ceramics pre-sintered at different temperatures for 5 h with 100 ppm SiO2 additive (a) 1650 ℃; (b) 1750 ℃; (c) 1775 ℃; (d) 1800 ℃; (e) 1825 ℃

Fig. 7 In-line transmittance of the HIPed Pr:LuAG ceramics pre-sintered at different temperatures for 5 h with 100 ppm SiO2 additive

Fig. 8 FESEM images of the thermally etched HIPed Pr:LuAG ceramics pre-sintered at different temperatures for 5 h with 100 ppm SiO2 additive (a) 1750 ℃; (b) 1775 ℃; (c)1800 ℃; (d) 1825 ℃

Fig. 9 Relative densities of the Pr:LuAG ceramics pre-sintered at 1775 ℃ with different holding time and different SiO2 additives

Fig. 10 In-line transmittance of the HIPed Pr:LuAG ceramics pre-sintered at 1775 ℃ with different holding time and different SiO2 additives

Fig. 11 Normalized XEL spectra of Pr:LuAG ceramics with different SiO2 additives

Table 1 Light yield, energy resolution, scintillation decay and the intensity of fast component of the Pr:LuAG ceramics with different SiO2 additives

SiO₂/ ppm	LY, ER @1 μs /(ph·MeV^-1, %)	LY, ER @6 μs /(ph·MeV^-1, %)	τ₁/ns	τ₂/ns	I_fast/%
0	13033, 18.0	18091, 17.1	23.11	1476	46.4
50	12560, 16.5	15880, 15.3	23.75	1462	57.9
100	10686, 15.4	13453, 15.1	23.35	1343	58.2
150	9965, 15.8	12574, 15.4	21.41	1334	57.5
200	10104, 14.7	12726, 14.3	23.27	1340	58.1

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Trace SiO₂ Addition on Optical and Scintillation Property of Pr:Lu₃Al₅O₁₂ Ceramics

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