利用射频等离子体增强化学气相沉积法(RF-PECVD)在已经预沉积有非晶硅薄膜的石英衬底上低温沉积了N/I非晶硅薄膜, 对样品进行了两步快速光热(RTP)退火. 采用 Raman、X射线衍射(XRD)、扫描电子显微镜(SEM)和透射电子显微镜(TEM)等测试仪器对样品退火前后的结晶状况和微观形貌进行了分析. 结果表明, 该N/I非晶硅薄膜退火后的晶化率达到了94%左右, 断面形貌为柱状结构, 样品中的平均晶粒尺寸约30nm, 晶粒团簇的尺寸最大约1.5μm.
N/I silicon thin films were deposited on amorphous silicon thin film coated quartz substrate by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD)system at low temperature, and subsequently annealed by two-step rapid thermal processing (RTP). Through Raman scattering, X-Ray diffraction (XRD), scanning electron microscope(SEM) and transmittance electron microscope (TEM) measurement, the crystallization and morphologies of the sample were investigated. The results show that the crystallinity of the N/I silicon thin films reaches about 94% after being annealed. The cross sectional morphology of the N/I silicon thin films is of columnar grains and the average grain size of the sample is about 30nm while the biggest grain cluster is about 1.5μm in landscape orientation.
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