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无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

非极性GaN用r面蓝宝石衬底

杨新波1,3, 徐 军1, 李红军1, 毕群玉2,3, 程 艳2,3, 苏良碧1, 周国清2   

  1. 1. 中国科学院 上海硅酸盐研究所 透明光功能无机材料重点实验室, 上海 201800; 2. 中国科学院 上海光学精密机械研究所, 上海 201800; 3. 中国科学院 研究生院, 北京 100049
  • 收稿日期:2008-12-05 修回日期:2009-02-09 出版日期:2009-07-20 网络出版日期:2009-07-20

R-plane Sapphire Substrate for Non-polar GaN Film

YANG Xin-Bo1, 3, XU Jun1, LI Hong-Jun1, BI Qun-Yu2,3, CHENG Yan2,3, SU Liang-Bi1, ZHOU Guo-Qing2   

  1. 1. Key Laboratory of Transparent and OptoFunctional Advanced Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China; 2. Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China; 3 Graduate University of the Chinese Academy of Sciences, Beijing 100049, China
  • Received:2008-12-05 Revised:2009-02-09 Published:2009-07-20 Online:2009-07-20

PDF (PC)

2018

被引次数

1

摘要： 采用温梯法生长了非极性GaN外延衬底r(0112)面蓝宝石, 使用化学机械抛光加工衬底表面, 对衬底的结晶质量、光学性能和加工质量进行了研究. 结果显示r面蓝宝石衬底基本性能参数如下：平均半峰宽值为19.4arcsec; 位错密度为5.6×103cm-2, 波长大于300nm时的平均透过率大于80％; 光学均匀性Δn=6.6×10-5; 平均表面粗糙度为0.49nm. 结果表明, 温梯法生长的r(0112)面蓝宝石衬底结晶质量好、位错密度低、光学性能优良、加工的表面质量高, 达到了GaN外延衬底的标准.

关键词: r面蓝宝石, 非极性GaN, 衬底

Abstract: R-plane sapphire used for epitaxial growth of non-polar GaN film was grown by the temperature gradient technique (TGT) method and chemical mechanical method was used to polish the r-plane sapphire substrate. The crystallization quality, optical property and surface roughness of as-obtained r-plane sapphire substrate were investigated. The average full width at half maximum (FWHM) of the substrate is 19.4arcsec and the dislocation density is 5.6×103cm-2. The transmission of the substrate is higher than 80% when the wavelength is longer than 300nm and the optical homogeneity is 6.6×10-5. The average surface roughness of the r-plane sapphire substrate is 0.49nm. The results indicate that as-obtained r-plane sapphire substrate meets the basic standard of GaN substrate.

Key words: r-plane sapphire, non-polar GaN, substrate

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