MF(I)S结构设计对硅基铁电薄膜系统C-V特性的影响

无机材料学报

MF(I)S结构设计对硅基铁电薄膜系统C-V特性的影响

于军; 董晓敏; 赵建洪; 周文利; 谢基凡; 郑远开; 刘刚

华中理工大学电子科学与技术系; 武汉 430074

收稿日期:1998-10-06 修回日期:1998-11-19 出版日期:1999-08-20 网络出版日期:1999-08-20

C-V Characteristics of Ferroelectric Thin Film Systems with MF(I)S Structures on Si

YU Jun, DONG Xiao-Min, ZHAO Jian-Hong, ZHOU Wen-Li, XIE Ji-Fan, ZHENG Yuan-Kai, LIU Gang

Department of Electronics Science and Technology; Huazhong University of Science and Technology Wuhan 430074 China

Received:1998-10-06 Revised:1998-11-19 Published:1999-08-20 Online:1999-08-20

摘要/Abstract

摘要： 为制备符合铁电场效应晶体管（ＦＦＥＴ）及铁电存储二极管（ＦＭＤ）要求的高质量铁电薄膜，采用ＰＬＤ（ＰｕｌｓｅｄＬａｓｅｒＤｅｐｏｓｉｔｉｏｎ）工艺，制备了不同ＭＦ（Ｉ）Ｓ结构的硅基铁电薄膜系统由 Ｃ－Ｖ特性的对比分析可见，影响 Ｃ－Ｖ 特性的主要因素除了衬底类型、界面特性之外，还有薄膜的结构设计在此基础上，为改善铁电薄膜的 Ｃ－Ｖ 特性提出了合理设想.

关键词: 铁电薄膜, C-V特性, PLD法

Abstract: In order to fabricate high quality ferroelectric thin films qualified for Ferroelectric Field Effect Transistors (FFETs) and
Ferroelectric Memory Diodes (FMDs), different ferroelectric thin film systems, with the structure of MF (I) S, were deposited by using
the pulsed laser deposition technique. The C-V characteristics of them were analyzed with comparison. The results showed that the primary factors
having effect on C-V characteristics included configuration designs of the thin films in addition to the substrate type and the interface
properties of the systems. Based on the above results, practicable thoughts to improve the C-V characteristics of ferroelectric thin
films were presented.

Key words: ferroelectric thin film, C-V characteristic, PLD method

中图分类号:

TN304

于军,董晓敏,赵建洪,周文利,谢基凡,郑远开,刘刚. MF(I)S结构设计对硅基铁电薄膜系统C-V特性的影响[J]. 无机材料学报.

YU Jun,DONG Xiao-Min,ZHAO Jian-Hong,ZHOU Wen-Li,XIE Ji-Fan,ZHENG Yuan-Kai,LIU Gang. C-V Characteristics of Ferroelectric Thin Film Systems with MF(I)S Structures on Si[J]. Journal of Inorganic Materials.

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