Bi2-xSbxTe3温差电材料薄膜的电化学制备、表征及性能研究

无机材料学报

Bi_2-xSb_xTe₃温差电材料薄膜的电化学制备、表征及性能研究

王为; 黄庆华; 贾法龙; 张志荣

天津大学化工学院应用化学系, 天津 300072

收稿日期:2004-08-26 修回日期:2004-10-15 出版日期:2005-09-20 网络出版日期:2005-09-20

Structure and Property Characterization of Bi_2-xSb_xTe₃ Thermoelectric Films Prepared by Electrodeposition

WANG Wei; HUANG Qing-Hua; JIA Fa-Long; ZHANG Zhi-Rong

Department of Applied Chemistry; School of Chemical Engineering and Technology; Tianjin University; Tianjin 300072; China

Received:2004-08-26 Revised:2004-10-15 Published:2005-09-20 Online:2005-09-20

摘要/Abstract

摘要： 采用电化学控电位沉积的方法制备了Bi_2-xSb_xTe₃温差电材料薄膜.通过ESEM、XPS、XRD、EDS等方法对电沉积薄膜的形貌、结构和组成进行了研究,并测试了在不同电位下制备的Bi_2-xSb_xTe₃薄膜的温差电性能.研究结果表明,在含有Bi³⁺、HTeO₂⁺和SbO⁺的溶液中,采用控电位沉积模式,可实现铋、锑、碲三元共沉积,生成锑掺杂的Bi₂Te₃化合物Bi_2-xSb_xTe₃.通过调节沉积电位,可控制电沉积Bi_2-xSb_xTe₃薄膜的掺杂浓度,从而影响材料的温差电性能.控制沉积电位为-0.5V条件下制备的温差电材料薄膜的塞贝克系数最大,为213μV·K^-1,其组成为Bi_0.5Sb_1.5Te₃.随着沉积电位的负移,电沉积出的Bi_2-xSb_xTe₃薄膜的结晶状态将逐渐由等轴晶转变为树枝晶.研究证明,电沉积方法可以制备出性能优异的薄膜温差电材料.

关键词: 温差电材料薄膜, Bi_2-xSb_xTe₃化合物, 电沉积, 塞贝克系数

Abstract: Bi_2-xSb_xTe₃ thermoelectric films were prepared by potentiostatic electrodeposition. The morphology, structure and composition of the electrodeposited films were investigated by ESEM, XPS,
XRD, and EDS. And the Seebeck coefficients of Bi_2-xSb_xTe₃ thermoelectric films electrodeposited at different potentials were measured. The results indicate that bismuth, antimony and tellurium can
be coelectrodeposited to form Sb doped Bi₂Te₃ compouds Bi_2-xSb_xTe₃ in the solution containing Bi³⁺, HTeO⁺₂and SbO⁺. The doping concentration of Bi_2-xSb_xTe₃
thermoelectric films can be controlled through adjusting electrodeposition potential to affect their thermoelectric properties. The composition of the film electrodeposited at --0.5V is Bi_0.5Sb_1.5Te₃,
and it has the largest Seebeck coefficient of 213μV·K^-1. With the decrease of electrodeposition potential, the crystalline state of Bi_{_2-x}Sb__xTe_₃ film will transform from equiaxed crystal into
dendritic crystal. The study shows that the electrodeposition process can be successfully used to synthesize the thermoelectric films with better properties.

Key words: thermoelectric films, bismuth antimony telluride compounds, electrodeposition, Seebeck coefficient

中图分类号:

TB43

王为,黄庆华,贾法龙,张志荣. Bi_2-xSb_xTe₃温差电材料薄膜的电化学制备、表征及性能研究[J]. 无机材料学报.

WANG Wei,HUANG Qing-Hua,JIA Fa-Long,ZHANG Zhi-Rong. Structure and Property Characterization of Bi_2-xSb_xTe₃ Thermoelectric Films Prepared by Electrodeposition[J]. Journal of Inorganic Materials.

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Bi_2-xSb_xTe₃温差电材料薄膜的电化学制备、表征及性能研究

Structure and Property Characterization of Bi_2-xSb_xTe₃ Thermoelectric Films Prepared by Electrodeposition

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