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无机材料学报

无机材料学报

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高介电常数的栅极电介质LaAlO3薄膜的性能研究

王东生; 于涛; 游彪; 夏奕东; 胡安; 刘治国   

  1. 南京大学固体微结构物理国家重点实验室 南京 210093
  • 收稿日期:2001-12-24 修回日期:2002-03-04 出版日期:2003-01-20 网络出版日期:2003-01-20

Properties of High-k Gate Dielectric LaAlO3 Thin Films

WANG Dong-Sheng; YU Tao; YOU Biao; XIA Yi-Dong; HU An; LIU Zhi-Guo   

  1. National Laboratory of Solid State Microstructures; Nanjing University; Nanjing 210093; China
  • Received:2001-12-24 Revised:2002-03-04 Published:2003-01-20 Online:2003-01-20

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摘要： 在室温下,采用射频磁控溅射法在Si衬底上制备了具有高介电常数的LaAlO3薄膜,这是一种新的栅极电介质材料.在高纯O2中经过15min650℃的高温退火后LaAlO3薄膜仍然不晶化,这种热稳定性有利于减小薄膜的漏电流.本工作研究了LaAlO3薄膜的介电性能,其电容等效氧化物厚度为2.33nm,在外加偏压±1V处的漏电流很低,分别为3.73mA/cm2(+1V处)和5.32×10-4mA/cm2(-1V处),两者相差四个数量级.此结果表明,Pt/LaAlO3/Si结构具有良好的单向导电性能. C-V曲线的滞后电压VH=0.09V,界面态密度的值约为8.35×1011cm-2.研究结果表明,在今后的半导体器件的甚大规模集成(ULSI)中,具有高介电常数的LaAlO3薄膜将会是一种极有希望的栅极电介质材料.

关键词: 栅极电介质材料, 高介电常数, LaAlO3薄膜

Abstract: The properties of a new high-k gate dielectric material LaAlO3 were investigated. LaAlO3 thin films
were prepared on p-type Si substrates by using radio-frequency magnetron sputtering deposition. XRD analyses show that the films are amorphous even
after annealed in O2 at 650℃ for 15min. The capacitance equivalent oxide thickness is 2.33nm with a leakage current of 3.73mA/cm2
and 5.32×10-4mA/cm2 at V g=+1V and --1V, respectively. The capacitance-voltage (C-V) characteristic curves show the existence of
interface states in LaAlO_3 thin films. The hysteresis voltage in C-V curve is about 0.09V. The density of interface states calculated is about
8.35×1011cm-2. The current-voltage characteristic curves show that Pt/LaAlO3/Si thin film is conductive only under one voltage
direction. The LaAlO3 thin film will be a promising high-k gate dielectric for future ultra-large scale integrated devices.

Key words: gate dielectric materials, high-k, LaAlO3 thin films

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