正对电极结构型碳化硅光导开关的制备与性能研究

doi:10.3724/SP.J.1077.2012.11749

无机材料学报 ›› 2012, Vol. 27 ›› Issue (10): 1058-1062.DOI: 10.3724/SP.J.1077.2012.11749 CSTR: 32189.14.SP.J.1077.2012.11749

正对电极结构型碳化硅光导开关的制备与性能研究

常少辉^{1, 2}, 刘学超¹, 黄维¹, 周天宇^{1, 2}, 杨建华¹, 施尔畏¹

(1. 中国科学院上海硅酸盐研究所, 上海 200050; 2. 中国科学院研究生院, 北京100049)

收稿日期:2011-12-04 修回日期:2012-02-21 出版日期:2012-10-20 网络出版日期:2012-09-17
作者简介:常少辉(1985–), 男, 博士研究生. E-mail: changshh@student.sic.ac.cn
基金资助:
中国科学院知识创新工程重要方向项目(KJCX2-EW-W10)

Preparation and Properties of Lateral Contact Structure SiC Photoconductive Semiconductor Switches

CHANG Shao-Hui^1,2, LIU Xue-Chao¹, HUANG Wei¹, ZHOU Tian-Yu^1,2, YANG Jian-Hua¹, SHI Er-Wei¹

(1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China; 2. Graduate University of the Chinese Academy of Sciences, Beijing 100049, China)

Received:2011-12-04 Revised:2012-02-21 Published:2012-10-20 Online:2012-09-17
About author:CHANG Shao-Hui. E-mail: changshh@student.sic.ac.cn
Supported by:
Funds of the Chinese Academy of Sciences for Key Topics in Innovation Engineering (KJCX2-EW-W10)

摘要/Abstract

摘要： 采用钒掺杂半绝缘6H-SiC衬底, 以Ni/Au为接触电极制备了一系列正对电极结构型光导开关, 对SiC光导开关进行了不同外加电压、激发光强、激发光波长条件下的测试, 着重研究了SiC光导开关的光电吸收效应和光电响应性能. 实验结果表明, 532 nm的激光激发的脉冲信号宽度远小于1064 nm的激光激发的脉冲信号宽度, 半绝缘6H-SiC衬底对532 nm激光的吸收系数在0.601~0.692 mm^–1之间; 采用532 nm的激光激发光导开关, 获得了纳秒量级的响应信号; 流经开关的瞬态电流随着外加电压和激发光能量的增加而增大, 随着衬底厚度的增加而减小.

关键词: 光导开关, 钒掺杂6H-SiC, 正对电极结构

Abstract: A series of lateral structural photoconductive semiconductor switches (PCSS) were fabricated on V-doped semi-insulating 6H-SiC substrate with the Ni/Au contacts. These PCSS were measured with different bias voltages, excitation energies and excitation wavelengths. The photoelectric absorption effect and photoelectric response of SiC PCSS were investigated. It is found that the absorption coefficient is between 0.601 and 0.692 mm^–1 for semi-insulating 6H-SiC substrate when it is excited by 532 nm laser, and the corresponding pulse signal is much smaller than that excited by 1064 nm laser. Nanosecond-pulse signal is obtained for 6H-SiC PCSS excited by 532 nm laser. The peak current flowing through the switch is increased with increasing the bias voltage and excitation energy, while it is decreased with the increase in substrate thickness.

Key words: photoconductive semiconductor switches, V-doped 6H-SiC, lateral contact structure

中图分类号:

TN36

常少辉, 刘学超, 黄维, 周天宇, 杨建华, 施尔畏. 正对电极结构型碳化硅光导开关的制备与性能研究[J]. 无机材料学报, 2012, 27(10): 1058-1062.

CHANG Shao-Hui, LIU Xue-Chao, HUANG Wei, ZHOU Tian-Yu, YANG Jian-Hua, SHI Er-Wei. Preparation and Properties of Lateral Contact Structure SiC Photoconductive Semiconductor Switches[J]. Journal of Inorganic Materials, 2012, 27(10): 1058-1062.

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正对电极结构型碳化硅光导开关的制备与性能研究

Preparation and Properties of Lateral Contact Structure SiC Photoconductive Semiconductor Switches

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