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无机材料学报

无机材料学报

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直流磁控反应溅射制备IrO2薄膜

王世军; 丁爱丽; 仇萍荪; 何夕云; 罗维根   

  1. 中国科学院上海硅酸盐研究所无机功能材料开放实验室, 上海 200050
  • 收稿日期:1999-07-15 修回日期:1999-09-23 出版日期:2000-08-20 网络出版日期:2000-08-20

IrO2 Thin Films Deposited by DC Magnetron Sputtering Method

WANG Shi-Jun; DING Ai-Li; QIU Ping-Sun; HE Xi-Yun; LUO Wei-Gen   

  1. Laboratory of Functional Inorganic Materials; Shanghai Institute of Ceramics; Chinese Academy of Sciences; Shanghai 200050; China
  • Received:1999-07-15 Revised:1999-09-23 Published:2000-08-20 Online:2000-08-20

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摘要： 为研究氧化依（ＩｒＯ２）对ＰＺＴ铁电薄膜疲劳性能的影响，利用直流（ＤＣ）磁控反应溅射（ｓｐｕｔｔｅｒｉｎｇ）工艺成功地在ＳｉＯ２／Ｓｉ（１００）衬底上制得了高度取向的ＩｒＯ２薄膜．并在其上制成ＰＺＴ铁电薄膜．讨论了溅射参数（溅射功率、 Ａｒ／Ｏ２比、衬底温度）以及退火条件对氧化铱薄膜的结晶、取向和形态的影响．

关键词: 氧化铱薄膜, 直流磁控反应溅射, 热退火

Abstract: Iridium oxide (IrO2) thin films were successfully grown on SiO2/Si(100) substrate by a DC magnetron reactive sputtering method with an Ir target(99.9% purity).
PZT ferroelectric thin films were deposited by a sol-gel method. The as-deposited thin films were annealed with a thermal annealing process, after that the films
were highly directed at (110) or (200). The effect of sputtering parameters such as gun power, oxygen partial pressure (Ar/O2) and growth temperature
and annealing conditions on the crystalline nature and morphology of IrO2 thin films was discussed.

Key words: IrO2 thin film, DC magnetron reactive sputtering, thermal annealing

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