无机材料学报

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(Ni0.81Fe0.19)0.66Cr0.34/Ni0.81Fe0.19薄膜的各向异性磁电阻效应及尺寸效应

彭子龙1,2; 李佐宜1; 胡强2; 杨晓非1   

  1. 1. 华中科技大学电子科学与技术系, 武汉 430074; 2. 中国科学院物理研究所凝聚态物理中心和磁学国家重点实验室, 北京 100080
  • 收稿日期:2001-03-16 修回日期:2001-06-17 出版日期:2002-03-20 网络出版日期:2002-03-20

Anisotropic Magnetoresistance and Size Effect of (Ni0.81Fe0.19)0.66Cr0.34/Ni0.81Fe0.19 Thin films

PENG Zi-Long1,2; LI Zuo-Yi1; HU Qiang2; YANG Xiao-Fe1   

  1. 1.; Department of Electronic Science and Technology; Huazhong University of Science and Technology; Wuhan 430074; China; 2. State Key Laboratory of Magnetism; Institute of Physics and Center of Condensed Physics, Chinese Academy of Sciences, Beijing 100080, China
  • Received:2001-03-16 Revised:2001-06-17 Published:2002-03-20 Online:2002-03-20

摘要: 研究了以非磁性(Ni0.81Fe0.190.66CR0.34薄膜作为过诞层的坡莫合金Ni0.81Fe0.19薄膜的磁电阻效应和饱和磁场,分析退火处理对样品饱和磁场的影响和经刻蚀后的磁电阻效应膜线的尺寸效应,并建立一个统计模型定性分析了其性能变化的机理,计算结果符合实验.

关键词: 坡莫合金薄膜, 各向异性磁电阻效应, 过渡层, 尺寸效应

Abstract: The anisotropic magnetoresistance (AMR) and saturation magnetic field of the Permalloy thin films (Ni0.81Fe0.19) sputtered on a nonmagnetic (Ni0.81Fe0.19)0.66Cr0.34 buffer layer were measured. The AMR variations of the films after annealing and the size effect of the AMR stripes after etching were emphatically studied, and a qualitative analysis was proposed through a statistic model. The simulation results agree with the experiments.

Key words: Permalloy thin film, anisotropic magnetoresistance effect, buffer, size effect

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