基于液态金属镓制备二维氮化镓及其光电性能研究

doi:10.15541/jim20250210

无机材料学报 ›› 2026, Vol. 41 ›› Issue (3): 377-384.DOI: 10.15541/jim20250210 CSTR: 32189.14.10.15541/jim20250210

基于液态金属镓制备二维氮化镓及其光电性能研究

李泽熙(), 卢文杰, 王朝, 张璐, 李述体, 高芳亮()

华南师范大学电子科学与工程学院(微电子学院), 广州 510631

收稿日期:2025-05-15 修回日期:2025-07-03 出版日期:2025-09-11 网络出版日期:2025-09-11
通讯作者: 高芳亮, 研究员. E-mail: gaofl@m.scnu.edu.cn
作者简介:李泽熙(2000-), 男, 硕士研究生. E-mail: 2022023502@m.scnu.edu.cn
基金资助:
国家自然科学基金(62375090);国家自然科学基金(52002135);国家自然科学基金(62374062);广东省基础与应用基础研究基金(2024A1515140064);广东省自然科学基金(2023B1515120071);广东省科技计划项目(2023A0505050131);广东省高校特色创新项目(2023KTSCX028);广州市科技计划项目(2024A04J6456)

Two-dimensional GaN: Preparation Based on Liquid Metal Gallium and Photoelectric Properties

LI Zexi(), LU Wenjie, WANG Chao, ZHANG Lu, LI Shuti, GAO Fangliang()

School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Guangzhou 510631, China

Received:2025-05-15 Revised:2025-07-03 Published:2025-09-11 Online:2025-09-11
Contact: GAO Fangliang, professor. E-mail: gaofl@m.scnu.edu.cn
About author:LI Zexi (2000-), male, Master candidate. E-mail: 2022023502@m.scnu.edu.cn
Supported by:
National Natural Science Foundation of China(62375090);National Natural Science Foundation of China(52002135);National Natural Science Foundation of China(62374062);Guangdong Basic and Applied Basic Research Foundation(2024A1515140064);Natural Science Foundation of Guangdong Province(2023B1515120071);Guangdong Provincial Science and Technology Plan Project(2023A0505050131);Characteristic Innovation Project of Colleges and Universities in Guangdong Province(2023KTSCX028);Guangzhou Science and Technology Plan Project(2024A04J6456)

摘要/Abstract

摘要：

二维氮化镓(GaN)因既具有宽禁带半导体特性, 又具有量子限域效应双重特征, 在紫外光电子领域具有广阔的应用前景。然而, 金属有机化学气相沉积和分子束外延等常用方法制备二维GaN通常需要较高的生长温度、较长的制备时间和相对较高的成本。针对上述关键挑战, 本研究利用液态金属镓具有低温下熔化和易氧化的特点, 研发了一种高效、相对低温的二维GaN制备策略。首先, 利用简单易行的旋涂剥离法, 直接从液态镓表面提取获得非晶态氧化镓(Ga₂O₃); 随后, 通过氮化处理工艺, 在相对较低的温度(850 ℃)下, 对非晶Ga₂O₃进行处理, 成功实现了高晶体质量GaN的制备。研究结果表明, 制备的二维GaN厚度约为2.2 nm, 横向尺寸为厘米量级, 晶体结构为六方纤锌矿结构。基于制备的二维GaN构建了光电导型紫外光电探测器, 性能测试表明在5 V偏置电压和325 nm波长紫外光照射下, 器件展示出良好的响应度(4.14 A/W)和较高的探测率(1.02×10¹³ Jones)。本研究基于液态金属镓制备了大面积二维GaN材料, 为开发低维高性能紫外光电探测器提供了参考借鉴。

关键词: GaN, 液态金属镓, 旋涂剥离法, 紫外探测器

Abstract:

Two-dimensional (2D) gallium nitride (GaN) exhibits broad application prospects in the field of ultraviolet optoelectronics due to its dual characteristics of wide-bandgap semiconductor and quantum confinement effect. However, conventional synthesis methods for 2D GaN, such as metal-organic chemical vapor deposition and molecular beam epitaxy, typically require high growth temperatures, prolonged processing time, and relatively high costs. To address these critical challenges, this work leverages the intrinsic properties of liquid metal gallium, including its low melting point and ease of oxidation to develop an efficient and relatively low-temperature synthesis strategy for 2D GaN. The core of this strategy includes following steps. Firstly, utilizing a straightforward spin-coating exfoliation technique to directly extract an amorphous gallium oxide (Ga₂O₃) from the surface of liquid gallium. Subsequently, subjecting the amorphous Ga₂O₃to a nitridation treatment process at a relatively low temperature of 850 ℃, successfully achieved its conversion into high-crystalline-quality GaN. Characterization results demonstrate that the synthesized 2D GaN possesses a thickness of approximately 2.2 nm, a lateral dimension on the centimeter scale, and a hexagonal wurtzite crystal structure. Furthermore, based on the prepared 2D GaN, a photoconductive ultraviolet photodetector is constructed. Performance characterization results reveal that under a 5 V bias voltage and illumination by 325 nm ultraviolet light, the device exhibits a responsivity of 4.14 A/W and a high detectivity of 1.02×10¹³ Jones. This study demonstrates the successful preparation of large-area 2D GaN material based on liquid gallium metal, providing a valuable reference for the development of low-dimensional and high-performance ultraviolet photodetectors.

Key words: GaN, liquid metal gallium, spin-coating exfoliation method, ultraviolet photodetector

中图分类号:

TQ174

李泽熙, 卢文杰, 王朝, 张璐, 李述体, 高芳亮. 基于液态金属镓制备二维氮化镓及其光电性能研究[J]. 无机材料学报, 2026, 41(3): 377-384.

LI Zexi, LU Wenjie, WANG Chao, ZHANG Lu, LI Shuti, GAO Fangliang. Two-dimensional GaN: Preparation Based on Liquid Metal Gallium and Photoelectric Properties[J]. Journal of Inorganic Materials, 2026, 41(3): 377-384.

图/表 8

图1 二维GaN制备示意图

Fig. 1 Schematic diagram of two-dimensional GaN preparation

图2 二维GaN的形貌表征

Fig. 2 Morphological characterization of two-dimensional GaN (a) Optical microscope image; (b) SEM image; (c) AFM image with the right figure showing height profile

图3 二维GaN的晶体结构表征

Fig. 3 Crystal structure characterization of two-dimensional GaN (a) XRD pattern; (b) HRTEM image

图4 二维GaN的表面化学分析与光学性质表征

Fig. 4 Surface chemical analysis and optical property characterization of two-dimensional GaN (a) High-resolution XPS total spectrum; (b) High-resolution N1s XPS spectrum; (c) High-resolution Ga2p XPS spectrum; (d) Tauc plot corresponding to the absorption spectrum

图5 二维GaN光电探测器的探测性能

Fig. 5 Detection performance of two-dimensional GaN photodetector (a) I-V curves in dark and 325 nm light (2.26 mW·cm2); (b) I-V curves of the ultraviolet light with different light intensities in the logarithmic coordinates; (c) I-T curve measured by the ultraviolet light with different light intensities; (d) Light intensity-light current power function diagram

图6 二维GaN光电探测器的光电性能曲线

Fig. 6 Photoelectric performance curves of two-dimensional GaN photodetector (a) R; (b) S and R; (c) EQE; (d) LDR and D*

图7 探测器的响应时间

Fig. 7 Response time of detector

表1 不同类型GaN紫外光电探测器的性能对比

Table 1 Performance comparison of GaN-based ultraviolet photodetectors

Material	R/(A·W^-1)	EQE/%	D^*/Jones	Test voltage/V	Ref.
2D	2.01	683	5.34×10¹⁰	10	[29]
Thin film	0.13	49.76	9.79×10⁸	5	[30]
Porous	0.187	62.8	4.34×10¹²	-3	[31]
Nanowires	0.023	−	4.40×10¹¹	0	[32]
Bulk	0.34	−	1.24×10⁹	5	[33]
2D	4.14	1400	1.02×10¹³	5	This work

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基于液态金属镓制备二维氮化镓及其光电性能研究

Two-dimensional GaN: Preparation Based on Liquid Metal Gallium and Photoelectric Properties

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