AlN: Er薄膜在不同退火温度下应力诱导的微观结构演变

doi:10.15541/jim20150399

无机材料学报 ›› 2016, Vol. 31 ›› Issue (3): 285-290.DOI: 10.15541/jim20150399 CSTR: 32189.14.10.15541/jim20150399

AlN: Er薄膜在不同退火温度下应力诱导的微观结构演变

阳明明^1,²(), 莫亚娟³, 王晓丹³, 曾雄辉¹(), 刘雪华¹, 黄俊¹, 张纪才¹, 王建峰¹, 徐科¹()

1.中国科学院苏州纳米技术与纳米仿生研究所, 苏州 215123
2.上海大学材料科学与工程学院, 上海 200444
3.苏州科技学院物理科学与技术系, 苏州 215009

收稿日期:2015-08-25 修回日期:2015-11-10 出版日期:2016-03-20 网络出版日期:2016-02-24
作者简介:
阳明明(1987-), 男, 硕士研究生. E-mail: mmyang2014@sinano.ac.cn
基金资助:
国家自然科学基金(61306004, 51002179, 11247023, 51272270, 61274127, 61474133);江苏省自然科学基金(BK20130263, BK2012630);国家基础研究计划973项目(2012CB619305);中科院引进国外杰出技术人才项目;苏州纳米科技协同创新中心资金

Stress Induced Microstructure Evolution of AlN: Er Film at Different Annealing Temperature

YANG Ming-Ming^1,²(), MO Ya-Juan³, WANG Xiao-Dan³, ZENG Xiong-Hui¹(), LIU Xue-Hua¹, HUANG Jun¹, ZHANG Ji-Cai¹, WANG Jian-Feng¹, XU Ke¹()

1. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
2. Shanghai University School of Materials Science and Engineering, Shanghai 200444, China
3. University of Science and Technology of Suzhou, Suzhou 215009, China

Received:2015-08-25 Revised:2015-11-10 Published:2016-03-20 Online:2016-02-24
Supported by:
National Natural Science Foundation of China(61306004, 51002179, 11247023, 51272270, 61274127, 61474133);Natural Science Fund of Jiangsu Province(BK20130263, BK2012630);National Basic Research Program of China (973 Program)) (2012CB619305);CAS Project of Introduction of Outstanding Technical Talent;Collaborative Innovation Center of Suzhou Nano Science and Technology

摘要/Abstract

摘要：

以透射电镜中的弱束衍衬成像和高分辨相位衬度成像为主要表征手段, 辅以X射线衍射、拉曼光谱等测试方法, 对AlN: Er样品在退火过程中的微观结构演变过程进行了深入分析。在透射电镜观察下, Er离子注入的AlN样品在退火前存在三个区域: 区域Ⅰ为自表面以下约30 nm深度; 区域Ⅱ为区域I以下约50 nm深度; 区域Ⅲ为区域Ⅱ以下的部分, 其中区域Ⅱ为损伤最为严重的区域。在较低的温度(如1025℃时)退火后, 区域Ⅰ消失; 但1200℃退火后, 又重新可以观察到区域Ⅰ。结合TEM、XRD和Raman测试结果, 从损伤恢复和应力释放的角度对上述实验现象进行了理论解释: 由于Er离子半径和基体原子半径的差异, 在区域Ⅱ中引入较大的应力; 在1025℃退火时, 来自区域Ⅱ的应力作用于区域Ⅰ, 导致区域I发生大的晶格扭曲, 和区域II合并, 用TEM观察不到; 在1200℃退火时, 应力在表面释放, 区域I的晶格扭曲修复, 从而用TEM可重新观察到。

关键词: AlN: Er, 离子注入, 微观结构演变

Abstract:

The microstructure evolution of AlN: Er during thermal treatment was mainly characterized by weak beam diffraction-contrast imaging and high resolution phase-contrast imaging of the transmission electron microscopy (TEM), which was also supported by X-ray diffraction (XRD) and Raman spectroscopy. Three regions could be observed in the TEM for the implanted samples. The region I is about 30 nm in depth below the surface, the region II is about 50 nm in depth under the region I and is the worst damaged area, and the region III is the area below the reigion II. At relatively low annealing temperature, such as 1025℃, the region I disappears. However, this area can be observed again after annealing at 1200℃. Based on the results of XRD, Raman and TEM, the interesting experiment phenomenon are explained on the view of damage recovery and stress releasing. There is a large stress in the region II due to the large radius difference between Er ions and Ga ions. In the annealing process at 1025℃, the region I is affected by the stress from region II, the lattice distortion in region I is produced. Therefore, the region I is observed as region II under TEM observation. In the annealing process at 1200 ℃, the stress in the region I is released from the surface, the lattice distortion is removed and the region I is observed again under TEM.

Key words: AlN: Er, ion implantation, microstructure evolution

中图分类号:

O474

阳明明, 莫亚娟, 王晓丹, 曾雄辉, 刘雪华, 黄俊, 张纪才, 王建峰, 徐科. AlN: Er薄膜在不同退火温度下应力诱导的微观结构演变[J]. 无机材料学报, 2016, 31(3): 285-290.

YANG Ming-Ming, MO Ya-Juan, WANG Xiao-Dan, ZENG Xiong-Hui, LIU Xue-Hua, HUANG Jun, ZHANG Ji-Cai, WANG Jian-Feng, XU Ke. Stress Induced Microstructure Evolution of AlN: Er Film at Different Annealing Temperature[J]. Journal of Inorganic Materials, 2016, 31(3): 285-290.

图/表 4

图1 不同Er注入剂量下AlN: Er样品的室温Raman谱图

Fig. 1 Raman spectra of AlN: Er with various Er concentrations at room temperature

图2 注入剂量为1×1015 at/cm2样品经不同温度退火后的Raman谱(a)和注入剂量为1×1015 at/cm2样品经不同退火温度后的E2high峰位(b)

Fig. 2 (a) Raman spectra after being annealed at different temperature with a fluence of 1×1015 at/cm2 and (b) E2high position of AlN with 1×1015 at/cm2 annealed at different temperatures

图3 (a)注入剂量为1×1015 at/cm2的样品在1100℃退火前后的HRXRD图谱; (b)不同的注入剂量以及退火温度下的AlN(0002)晶面峰位以及A1的变化, RA代表快速退火

Fig. 3 (a) HRXRD patterns of AlN with 1×1015 at/cm2 before and after annealling at 1100℃ and (b) variation of AlN (0002) peak and A1 under different dose and annealing temperature. RA is short for rapid annealing

图4 注入剂量为1×1015 at/cm2的AlN: Er样品的TEM和HRTEM照片

Fig. 4 TEM and HRTEM images of AlN: Er implanted with dosage of 1×1015 at/cm2(a) Weak beam bright field image before anneal( g=0002); (b) HRTEM micrograph of region Ⅰ in Fig.4(a) ; (c) Weak beam bright field image after annealed at 1025℃ (g=0002); (d) HRTEM micrograph of the near surface area, the area inside the box for moiré fringe; (e) HRTEM micrograph of region Ⅰ after annealed at 1100℃(g=0002), area inside the box for moiré fringe; (f) Weak beam bright field image after annealed at 1200℃ under g=0002; (g) HRTEM micrograph of region Ⅰ after annealed at 1200℃

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AlN: Er薄膜在不同退火温度下应力诱导的微观结构演变

Stress Induced Microstructure Evolution of AlN: Er Film at Different Annealing Temperature

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