SiC晶须制备工艺的研究

doi:10.3724/SP.J.1077.2013.12503

无机材料学报 ›› 2013, Vol. 28 ›› Issue (7): 757-762.DOI: 10.3724/SP.J.1077.2013.12503 CSTR: 32189.14.SP.J.1077.2013.12503

SiC晶须制备工艺的研究

陈旸^1,2, 王成国², 高冉冉², 朱波²

(山东大学 1. 材料液固结构演变与加工教育部重点实验室；2. 材料学院, 碳纤维工程技术研究中心, 济南 250061)

收稿日期:2012-08-17 修回日期:2012-10-17 出版日期:2013-07-20 网络出版日期:2013-06-19
作者简介:陈旸(1983?), 男, 博士研究生. E-mail: chenyang@mail.sdu.edu.cn
基金资助:
国家重点基础研究发展计划(973计划)(2011CB605601); 国家“863”项目(2009AA035301); 山东大学研究生自主创新基金(yzc12075)

Research of the Preparation Technology for the SiC Whisker

CHEN Yang^1,2, WANG Cheng-Guo², GAO Ran-Ran², ZHU Bo²

(1. Key Laboratory for Liquid-Solid Structural Evolution & Processing of Materials Ministry of Education, Shandong University, Jinan 250061, China; 2. Carbon Fiber Engineering Research Center, Faculty of Materials Science, Shandong University, Jinan 250061, China)

Received:2012-08-17 Revised:2012-10-17 Published:2013-07-20 Online:2013-06-19
About author:CHEN Yang. E-mail: chenyang@mail.sdu.edu.cn
Supported by:
National Basic Research Program of China (2011CB605601); 863 High-Tech Program (2009AA035301); Shandong University Graduate Student Independent Innovation Fund (yzc12075)

摘要/Abstract

摘要： 实验以高含氢硅油(H-PSO)为原料, 在石墨材料表面制备SiC晶须, 利用“正交试验法”以结晶率为指标, 研究热处理温度(T)、保温时间(t)、保护性气氛流量(f)和基体孔隙率(P)这四个因素对SiC晶须生成的影响。通过扫描电镜、透射电镜、拉曼光谱及X射线衍射等测试手段, 分析了SiC晶须形貌及结构特点。实验结果表明, 热处理温度是影响SiC晶须生成最重要的因素, 其影响程度远远大于其他参数, 其次是气流量、孔隙率和保温时间。安全流量范围内, 较高的气流量使SiC晶须生成反应充分进行; 较小的孔隙率有利于SiC晶核的长大; 高的热处理温度及长的保温时间能促进SiC晶须的继续生长。SiC晶须是以SiC晶相为核, 以硅的氧化物为壳的核壳结构。

关键词: 石墨材料, SiC晶须, 结晶率, 正交试验法

Abstract: SiC whiskers were prepared on graphite matrix using common and low-cost hydrogen silicone oil (H-PSO) as raw material, and the influence of different process parameters on the growth of SiC whisker was studied based on the crystallization fraction using orthogonal test method. The process parameters include heat treatment temperature (T), holding time (t), flow of protective atmosphere (f) and porosity of matrix (P). The morphology and structural characteristics of SiC whisker were also analyzed by SEM, TEM, RAMAN and XRD. The results show that the temperature is the most important factor that influences the growth of SiC whisker, followed by gas flow, porosity, holding time in proper sequence. The bigger gas flow in safe range makes generation reaction of SiC whisker sufficient, and smaller porosity benefits SiC crystal nucleus to grow up. Higher temperature and longer time are favorable to whisker continued growth. The SiC whisker is of core-shell structure with SiC phase as core and silicon oxide as the shell.

Key words: graphite materials, SiC whisker, crystallization fraction, orthogonal test method

中图分类号:

TB33

陈旸, 王成国, 高冉冉, 朱波. SiC晶须制备工艺的研究[J]. 无机材料学报, 2013, 28(7): 757-762.

CHEN Yang, WANG Cheng-Guo, GAO Ran-Ran, ZHU Bo. Research of the Preparation Technology for the SiC Whisker[J]. Journal of Inorganic Materials, 2013, 28(7): 757-762.

参考文献

[1] LING Yun-Han, LI Jiang-Tao, GE Chang-Chun, et al. Fabrication and evaluation of SiC/Cu functionally graded material used for plasma facing components in a fusion reactor. Journal of Nuclear Materials, 2002, 303(2/3):188–195.

[2] HUANG Jian-Feng, LI He-Jun, XIONG Xin-bo, et al. Progress on the oxidation protective coating of carbon-carbon composites. New Carbon Materials, 2005, 20(4): 373–379.

[3] Joachim Roth. Chemical erosion of carbon based materials in fusion devices. Journal of Nuclear Materials, 1999, 266-269: 51–57.

[4] LU W M, CHUNG D D L. Oxidation protection of carbon materials by acid phosphate impregnation. Carbon, 2002, 40(8): 1249–1254.

[5] HU Hai-Feng, LI Yan-Wu, CHEN Zhao-Hu, et al. Ceramic coatings on stainless steel via precursor pyrolysis. Materials Engineering, 1997(3): 7–9.

[6] HE Xin-Bo. Effect of sintering additives on mechanical properties of Cf/SiC composites. Materials Chemistry and Physics, 2002, 74(3): 300–305.

[7] FU Qian-Gang, LI He-Jun, ZHANG Zheng-Zhong, et al. SiC nanowire-toughened MoSi2-SiC coating to protect carbon/carbon composites against oxidation. Corrosion Science, 2010, 52: 1879–1882.

[8] CHEN Yang, WANG Cheng-Guo, ZHAO Wei. Fabrication of self-healing pure SiC coating by a two-step technique. Acta Phys. -Chim. Sin., 2012, 28(1): 239–244.

[9] CHEN Yang, WANG Cheng-Guo, ZHAO Wei, et al. Fabrication of a SiC/Si/MoSi2 multi-coating on graphite materials by a two-step technique. Ceramics International, 2012, 38(3): 2165–2170.

[10] Shin Yongsoon, Wang Chongmin, Samuels William D, et al. Synthesis of SiC nanorods from bleached wood pulp. Materials Letters, 2007, 61(13): 2814–2817.

[11] Krishnarao R V, Subrahmanyam J. Formation of SiC from rice husk silica-carbon black mixture: effect of rapid heating. Ceramics International, 1996, 22(6): 489–492.

[12] Rajnish Dhiman, Erik Johnson, Per Morgen. Growth of SiC nanowhiskers from wooden precursors, separation, and characterization. Ceramics International, 2011, 37(8): 3759–3764.

[13] Krishnarao R V, Godkhindi M M, Chakraborty M, et al. Formation of SiC whiskers from compacts of raw rice husks. Journal Materials Science, 1994, 29(10): 2741–2744.

[14] Dhage Sanjay, Lee Hyun-Choel, Hassan M Shamshi, et al. Formation of SiC nanowhiskers by carbothermic reduction of silica with activated carbon. Materials Letter, 2009, 63(2): 174–176.

[15] Nhut J M, Vieira R, Pesant L, et al. Synthesis and catalytic uses of carbon and silicon carbide nanostructures. Catal. Today, 2002, 76(1): 11–32.

[16] Panda S K, Sengupta J, Jacob C. Synthesis of β-SiC/SiO2 core-sheath nanowires by CVD technique using Ni as catalyst. Journal of Nanoscience and Nanotechnology, 2010, 10(5): 3046–3052.

[17] Tang C C, Fan S S, Dang H Y, et al. Growth of SiC nanorods prepared by carbon nanotubes-confined reaction. Journal of Crystal Growth, 2000, 210(4): 595–599.

[18] Grill A, Patel V. Low dielectric constant films prepared by plasma-enhanced chemical vapor deposition from tetramethylsilane. Journal of Applied Physics, 1999, 85(6): 3314–3318.

[19] Kim M T, Lee J. Characterization of amorphous SiC H films deposited from hexamethyldisilazane. Thin Solid Films, 1997, 303(1/2): 173–179.

[20] Hu Quan-Li, Suzuki Hiroshi, Gao Hong, et al. High-frequency FTIR absorption of SiO2/Si nanowires. Chemical Physics Letters, 2003, 378(3/4): 299–304.

[21] Musumeci P, Reitano R, Calcagno L, et al. Relaxation and crystallization of amorphous silicon carbide probed by optical measurements. Philosophical Magazine Part B, 2006, 76(3): 323–333.

[22] Koumoto Kunihito, Takeda Shunji, Pai Chul-Hoon, et al. High-resolution electron microscopy observations of stacking faults in β-SiC. Journal of the American Ceramic Society, 1989, 72(10): 1985–1987.

[23] SEO Won-Seon, Koumoto Kunihito, Arai Shigeo. Effects of boron, carbon, and iron content on the stacking fault formation during synthesis of β-SiC particles in the system SiO2–C–H2. Journal of the American Ceramic Society, 1998, 81(5):1255–1261.

[24] Klein S, Houben L, Carius R, et al. Structural properties of microcrystalline SiC deposited at low substrate temperatures by HWCVD. Journal of Non-Crystalline Solids, 2006, 352(9-20): 1376–1379.

[25] Yang Wen, Araki Hiroshi, Hu Quan-Li, et al. In situ growth of SiC nanowires on RS-SiC substrate. Journal?of?Crystal?Growth, 2004, 264(1/2/3): 278–283.

[26] Chen Yang, Wang Chen-Guo, Zhu Bo, et al. Growth of SiC whiskers from hydrogen silicone oil. Journal?of?Crystal?Growth, 2012, 357(15): 42–47.

[27] Huang Hao, Chen Da-Ming, Tong Jian-Feng, et al. Microstructure study of the SiC coatings on graphite by CVD. Journal of Aeronautical Materials, 2008, 28(2): 50–54.

编辑推荐 0

Metrics

阅读次数

全文

1018

HTML			PDF

最新录用	在线预览	正式出版	最新录用	在线预览	正式出版
0	0	1	0	0	1017

来源	本网站	其他网站

次数	430	588
比例	42%	58%

摘要

775

最新录用	在线预览	正式出版

0	0	775

来源	本网站	其他网站

次数	98	678
比例	13%	87%

SiC晶须制备工艺的研究

Research of the Preparation Technology for the SiC Whisker

RichHTML

PDF (PC)

可视化

被引次数

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 6

编辑推荐 0

Metrics

本文评价

[1]	徐晓虹, 田江洲, 吴建锋, 张乾坤, 金昊, 杜怿鑫. Fe₂O₃对原位制备SiC_w/SiC太阳能储热陶瓷的结构与性能的影响[J]. 无机材料学报, 2019, 34(10): 1103-1108.
[2]	宋永忠,翟更太,史景利,李贵生,郭全贵,宋进仁,刘朗. 中间相沥青制备高密度高强度炭/石墨材料[J]. 无机材料学报, 2008, 23(3): 519-524.
[3]	凌律巍,吴文彪,江东亮,谭寿洪,黄政仁. SiC晶须在Mullite浆料中的分散特性及流变学表征[J]. 无机材料学报, 2001, 16(6): 1084-1088.
[4]	叶枫,周玉,雷廷权,杨觉明,张立同. SiC_w/BAS复合材料的显微结构及力学性能的研究[J]. 无机材料学报, 2000, 15(3): 516-520.
[5]	许钫钫,温树林,大学NORDBERG L-O. 不同气氛下烧结的α-Sialon/SiC_(w)复合材料[J]. 无机材料学报, 1998, 13(3): 320-326.
[6]	赵军,邓建新,艾兴. 晶须增韧陶瓷刀具材料的R曲线与增韧机理的关系[J]. 无机材料学报, 1997, 12(3): 341-345.