SiC晶须制备工艺的研究

doi:10.3724/SP.J.1077.2013.12503

无机材料学报 ›› 2013, Vol. 28 ›› Issue (7): 757-762.DOI: 10.3724/SP.J.1077.2013.12503 CSTR: 32189.14.SP.J.1077.2013.12503

SiC晶须制备工艺的研究

陈旸^1,2, 王成国², 高冉冉², 朱波²

(山东大学 1. 材料液固结构演变与加工教育部重点实验室；2. 材料学院, 碳纤维工程技术研究中心, 济南 250061)

收稿日期:2012-08-17 修回日期:2012-10-17 出版日期:2013-07-20 网络出版日期:2013-06-19
作者简介:陈旸(1983?), 男, 博士研究生. E-mail: chenyang@mail.sdu.edu.cn
基金资助:
国家重点基础研究发展计划(973计划)(2011CB605601); 国家“863”项目(2009AA035301); 山东大学研究生自主创新基金(yzc12075)

Research of the Preparation Technology for the SiC Whisker

CHEN Yang^1,2, WANG Cheng-Guo², GAO Ran-Ran², ZHU Bo²

(1. Key Laboratory for Liquid-Solid Structural Evolution & Processing of Materials Ministry of Education, Shandong University, Jinan 250061, China; 2. Carbon Fiber Engineering Research Center, Faculty of Materials Science, Shandong University, Jinan 250061, China)

Received:2012-08-17 Revised:2012-10-17 Published:2013-07-20 Online:2013-06-19
About author:CHEN Yang. E-mail: chenyang@mail.sdu.edu.cn
Supported by:
National Basic Research Program of China (2011CB605601); 863 High-Tech Program (2009AA035301); Shandong University Graduate Student Independent Innovation Fund (yzc12075)

摘要/Abstract

摘要： 实验以高含氢硅油(H-PSO)为原料, 在石墨材料表面制备SiC晶须, 利用“正交试验法”以结晶率为指标, 研究热处理温度(T)、保温时间(t)、保护性气氛流量(f)和基体孔隙率(P)这四个因素对SiC晶须生成的影响。通过扫描电镜、透射电镜、拉曼光谱及X射线衍射等测试手段, 分析了SiC晶须形貌及结构特点。实验结果表明, 热处理温度是影响SiC晶须生成最重要的因素, 其影响程度远远大于其他参数, 其次是气流量、孔隙率和保温时间。安全流量范围内, 较高的气流量使SiC晶须生成反应充分进行; 较小的孔隙率有利于SiC晶核的长大; 高的热处理温度及长的保温时间能促进SiC晶须的继续生长。SiC晶须是以SiC晶相为核, 以硅的氧化物为壳的核壳结构。

关键词: 石墨材料, SiC晶须, 结晶率, 正交试验法

Abstract: SiC whiskers were prepared on graphite matrix using common and low-cost hydrogen silicone oil (H-PSO) as raw material, and the influence of different process parameters on the growth of SiC whisker was studied based on the crystallization fraction using orthogonal test method. The process parameters include heat treatment temperature (T), holding time (t), flow of protective atmosphere (f) and porosity of matrix (P). The morphology and structural characteristics of SiC whisker were also analyzed by SEM, TEM, RAMAN and XRD. The results show that the temperature is the most important factor that influences the growth of SiC whisker, followed by gas flow, porosity, holding time in proper sequence. The bigger gas flow in safe range makes generation reaction of SiC whisker sufficient, and smaller porosity benefits SiC crystal nucleus to grow up. Higher temperature and longer time are favorable to whisker continued growth. The SiC whisker is of core-shell structure with SiC phase as core and silicon oxide as the shell.

Key words: graphite materials, SiC whisker, crystallization fraction, orthogonal test method

中图分类号:

TB33

陈旸, 王成国, 高冉冉, 朱波. SiC晶须制备工艺的研究[J]. 无机材料学报, 2013, 28(7): 757-762.

CHEN Yang, WANG Cheng-Guo, GAO Ran-Ran, ZHU Bo. Research of the Preparation Technology for the SiC Whisker[J]. Journal of Inorganic Materials, 2013, 28(7): 757-762.

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SiC晶须制备工艺的研究

Research of the Preparation Technology for the SiC Whisker

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