外场下NBT-KBT100x压电薄膜畴变演化、保持特性及印记的研究

doi:10.3724/SP.J.1077.2013.12492

无机材料学报 ›› 2013, Vol. 28 ›› Issue (7): 707-712.DOI: 10.3724/SP.J.1077.2013.12492 CSTR: 32189.14.SP.J.1077.2013.12492

外场下NBT-KBT100x压电薄膜畴变演化、保持特性及印记的研究

朱哲, 郑学军, 张丹书

(湘潭大学材料与光电物理学院, 湘潭 411105)

收稿日期:2012-08-10 修回日期:2012-11-01 出版日期:2013-07-20 网络出版日期:2013-06-19
基金资助:
教育部长江学者和创新团队发展计划([2011]20); 长江学者奖励计划([2009]17); 湘潭大学博士科研启动基金(11QDZ24)

Domain Switching, Retention and Imprint of NBT-KBT100x Piezoelectric Thin Films under Different External Fields

ZHU Zhe, ZHENG Xue-Jun, ZHANG Dan-Shu

(Faculty of Materials and Optoelectronic Physics, Xiangtan University, Xiangtan 411105, China)

Received:2012-08-10 Revised:2012-11-01 Published:2013-07-20 Online:2013-06-19
Supported by:
PCSIRT([2011]20); Changjiang Scholar Incentive Program ([2009]17); Start-up Fund for Doctor of Xiangtan University (11QDZ24)

摘要/Abstract

摘要： 采用金属有机物分解法制备了不同K含量的弛豫型压电薄膜(1-x)Na_0.5Bi_0.5TiO_3-xK_0.5Bi_0.5TiO₃(NBT-KBT100x)。利用压电力显微镜研究了外场条件下纳米级铁电畴翻转, 以及保持性能和印记失效。结果表明: (1)不同组分中, NBT-KBT17薄膜单畴态的晶粒个数最多。选取NBT-KBT17薄膜分别测试了其面内极化分量和面外极化分量, 该薄膜的面内压电信号较强, 这说明薄膜在d₃₁模式下的压电响应明显。(2)选择NBT-KBT17薄膜中较大尺寸的单晶, 实现了对弛豫性铁电体的电畴写入。将其在大气环境下放置不同时间, 出现了退极化现象, 但总的畴态稳定, 表明其保持性能较好。(3)制备了NBT-KBT17原理型薄膜电容器, 分别测试了加载作用前后NBT-KBT17薄膜电容器的相位和振幅滞后回线图。结果表明外加作用力使相位回线向右发生了一定的移动, 且振幅的蝶形曲线均在不同方向上发生了偏移, 同时形状也发生了改变。最后, 利用空间电荷原理分析了外加力导致薄膜印记产生的机理。

关键词: 压电力显微镜, 畴翻转, 保持性, 印记

Abstract: MOD method was used to prepare (1-x)Na_0.5Bi_0.5TiO_3-xK_0.5Bi_0.5TiO₃ (NBT-KBT100x) relaxor piezoelectric thin films. The surface morphology, the initial domain structures, domain switching, retention and imprint of NBT-KBT100x thin films were observed by PFM under different external fields. The results show that the NBT-KBT17 thin film presents the most single domain grains. Moreover, the LPFM phase and amplitude images of NBT-KBT17 thin film are also obtained, which indicates that the piezoelectric response is significant at d31 mode. The single grain with larger size of NBT-KBT17 thin film is selected to write the domain by opposite DC voltages. The written single grain is then placed in environment for different duration to detect the domain evolution and retention of the thin film. Although the depolarization phenomenon is observed in small area, the original domain states are still stable, showing low retention loss. The phase and amplitude-electric voltage hysteresis loops of NBT-KBT17 thin film capacitor are observed by PFM under the mechanical force. The observations indicate that the hysteresis loop and butterfly curve has a migration, which means the imprint is produced by the external force. Finally, the formation mechanism of imprint is explained by space charge principle.

Key words: PFM, domain switching, retention, imprint

中图分类号:

TQ174

朱哲, 郑学军, 张丹书. 外场下NBT-KBT100x压电薄膜畴变演化、保持特性及印记的研究[J]. 无机材料学报, 2013, 28(7): 707-712.

ZHU Zhe, ZHENG Xue-Jun, ZHANG Dan-Shu. Domain Switching, Retention and Imprint of NBT-KBT100x Piezoelectric Thin Films under Different External Fields[J]. Journal of Inorganic Materials, 2013, 28(7): 707-712.

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外场下NBT-KBT100x压电薄膜畴变演化、保持特性及印记的研究

Domain Switching, Retention and Imprint of NBT-KBT100x Piezoelectric Thin Films under Different External Fields

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