无机材料学报 ›› 2012, Vol. 27 ›› Issue (4): 369-374.DOI: 10.3724/SP.J.1077.2012.00369 CSTR: 32189.14.SP.J.1077.2012.00369

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脉冲激光沉积制备Co掺杂ZnO薄膜的磁学性质研究

刘雪珍1, 鲍善永1, 张欢欢1, 马春雨1, 徐晓明2, 张庆瑜1   

  1. (1. 大连理工大学 物理与光电工程学院, 三束材料改性教育部重点实验室, 大连116024; 2. 清华大学 材料科学与工程学院, 北京100084)
  • 收稿日期:2011-05-12 修回日期:2011-07-14 出版日期:2012-04-10 网络出版日期:2012-03-12
  • 作者简介:刘雪珍(1983-), 女, 硕士研究生. E-mail: xzliu0130@yahoo.com.cn
  • 基金资助:
    国家自然科学基金(10774018);国家重点研究计划(2007CB616902)

Study on the Magnetism of Epitaxial ZnCoO Films Deposited by Pulsed Laser Deposition

LIU Xue-Zhen1, BAO Shan-Yong1, ZHANG Huan-Huan1, MA Chun-Yu1, XU Xiao-Ming2, ZHANG Qing-Yu1   

  1. (1. Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024, China; 2. Department of Materials, Tsinghua University, Beijing 100084, China)
  • Received:2011-05-12 Revised:2011-07-14 Published:2012-04-10 Online:2012-03-12
  • About author:LIU Xue-Zhen. E-mail: xzliu0130@yahoo.com.cn
  • Supported by:
    National Natural Science Foundation of China (10774018);Key Basic Research Project from the Ministry of Science and Technology of China (2007CB616902)

摘要:

采用脉冲激光沉积的方法, 利用Zn0.95Co0.05O陶瓷靶, 在不同氧气压力下制备Zn1-xCoxO薄膜. 利用X射线衍射(XRD)、电子探针、吸收光谱对薄膜中Co含量、Co2+离子比例以及相组成进行了定量分析, 研究了沉积过程中氧气压力对薄膜中Co含量的影响, 定量讨论了薄膜中Co含量、Co2+离子比例以及相组成与薄膜室温磁性之间的关系, 分析了薄膜磁性的起源. 分析结果表明: 薄膜中Co含量随氧气压力增大而减少, Co以替位Co2+离子为主. 精细XRD分析表明, 薄膜中存在纳米尺度的金属Co团簇, 其含量与薄膜室温磁性估计的结果一致, Zn1-xCoxO薄膜的室温磁性归因于金属Co纳米团簇的超顺磁磁化机制.

关键词: Co掺杂ZnO, 稀磁半导体, 磁学性能, 磁化机制, 定量分析

Abstract:

Zn1-xCoxO films were deposited on Al2O3(001) substrates at different oxygen pressures with Zn0.95Co0.05O ceramic target by using pulsed laser deposition method. With X-ray diffraction (XRD), electron probe microanalysis (EPMA) and transmittance spectra, the contents of Co, Co2+ ions and phases in the films were quantitatively determined. The pressure dependence of Co contents in the films was given. The correlations between room-temperature magnetism and the Co, Co2+ ions and phases in the films are discussed quantitatively. It is found that the Co content in the film decreases with the increase of oxygen pressure during the deposition. Most of Co atoms are determined to be Co2+ ions entered the ZnO lattice to substitute for Zn2+ ions, but not being responsible for the magnetism of the films at room temperature. The metallic Co nano-clusters are detected by fine XRD analysis in the films deposited at 0.0001 Pa and 5.0 Pa, being consistent with the estimation using the room-temperature magnetism of the films. On the basis of quantitative analysis, a superparamagnetic magnetization mechanism of metallic Co nano-clusters is suggested and is compared with experimental results by quantitative calculation.

Key words: Co-doped ZnO, diluted magnetic semiconductors, magnetic property, magnetization mechanism, quantitative analysis

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