溅射气压对直流磁控溅射ZnO:Al薄膜的影响

doi:10.3724/SP.J.1077.2012.12213

无机材料学报 ›› 2012, Vol. 27 ›› Issue (10): 1112-1116.DOI: 10.3724/SP.J.1077.2012.12213 CSTR: 32189.14.SP.J.1077.2012.12213

溅射气压对直流磁控溅射ZnO:Al薄膜的影响

孙可为, 周万城, 黄珊珊, 唐秀凤

(西北工业大学材料科学与工程学院, 凝固技术国家重点实验室, 西安 710072)

收稿日期:2012-04-06 修回日期:2012-05-28 出版日期:2012-10-20 网络出版日期:2012-09-17
作者简介:SUN Ke-Wei(1979–), female, candidate of PhD. E-mail: sun_kewei@yeah.net
基金资助:
National Natural Science Foundation of China (51072165)

Effect of Sputtering Pressure on Al-doped ZnO Films by DC Magnetron Sputtering

SUN Ke-Wei, ZHOU Wan-Cheng, HUANG Shan-Shan, TANG Xiu-Feng

(State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072, China)

Received:2012-04-06 Revised:2012-05-28 Published:2012-10-20 Online:2012-09-17
About author:SUN Ke-Wei(1979–), female, candidate of PhD. E-mail: sun_kewei@yeah.net
Supported by:
National Natural Science Foundation of China (51072165)

摘要/Abstract

摘要： 采用直流磁控溅射法在玻璃基片上沉积ZnO:Al(AZO)薄膜, 溅射气压为0.2~2.2 Pa. 通过X射线衍射(XRD)、扫描电子显微镜(SEM)、四探针和紫外–可见分光光度计对AZO薄膜的相结构、微观形貌和电光学性质进行了表征. 结果表明: 薄膜的沉积速率随着溅射气压的增大而减小, 变化曲线符合Keller-Simmons模型; 薄膜均为六角纤锌矿结构, 但择优取向随着溅射气压发生改变; 溅射气压对薄膜的表面形貌有显著影响; 当溅射气压为1.4 Pa 时, 薄膜有最低的电阻率(8.4×10^-4 Ω·cm), 高的透过率和最高的品质因子Q.

关键词: ZnO:Al薄膜, 直流磁控溅射, 溅射气压, 光电性质

Abstract: Al-doped ZnO (AZO) films were deposited on the glass substrates by direct current magnetron sputtering using different sputtering pressures ranging from 0.2 Pa to 2.2 Pa. Microstructure, phase, electrical and optical properties of AZO films were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), four-point probe and UV-Vis spectrophotometer, respectively. The results revealed that the deposition rate decreased with the increasing sputtering pressure according to Keller-Simmons model; the crystalline phase of all films was hexagonal wurtzite and the preferred orientation changed with the sputtering pressure; the surface morphology greatly depended on the sputtering pressure and the film deposited at 1.4 Pa showed low resistivity (8.4×10^-4 Ω·cm), high average transmission and the highest Q, a criterion factor as the film figure of merit, which was the ratio between the normalized average transmission and the normalized resistivity.

中图分类号:

TB34

孙可为, 周万城, 黄珊珊, 唐秀凤. 溅射气压对直流磁控溅射ZnO:Al薄膜的影响[J]. 无机材料学报, 2012, 27(10): 1112-1116.

SUN Ke-Wei, ZHOU Wan-Cheng, HUANG Shan-Shan, TANG Xiu-Feng. Effect of Sputtering Pressure on Al-doped ZnO Films by DC Magnetron Sputtering[J]. Journal of Inorganic Materials, 2012, 27(10): 1112-1116.

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溅射气压对直流磁控溅射ZnO:Al薄膜的影响

Effect of Sputtering Pressure on Al-doped ZnO Films by DC Magnetron Sputtering

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