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无机材料学报

无机材料学报 ›› 2011, Vol. 26 ›› Issue (2): 113-118.DOI: 10.3724/SP.J.1077.2011.00113 CSTR: 32189.14.SP.J.1077.2011.00113

• 研究论文 •    下一篇

铜铟硒薄膜的外延生长和表面重构及其电池性能研究

周 震1, 赵 夔1, 王耀明2, 黄富强2   

  1. 1. 北京大学物理学院, 北京 100871; 2. 中国科学院 上海硅酸盐研究所, 上海 200050
  • 收稿日期:2010-04-19 修回日期:2010-05-21 出版日期:2011-02-20 网络出版日期:2011-01-21
  • 作者简介:周 震(1981-), 男, 博士. E-mail: zhenzhou2009@gmail:.com
  • 基金资助:

    国家自然科学基金(50821004)

Surface Reconstructionof Epitaxial CIS Thin Films and Device Performance

ZHOU Zhen1, ZHAO Kui1, WANG Yao-Ming2, HUANG Fu-Qiang2   

  1. 1. The School of Physics, Peking University,Beijing 100871, China; 2. Shanghai Institute of Ceramics, Chinese Academy ofSciences, Shanghai 200050, China
  • Received:2010-04-19 Revised:2010-05-21 Published:2011-02-20 Online:2011-01-21
  • Supported by:

    National Nature Science Foundation of China(50821004)

PDF (PC)

2375

被引次数

4

摘要： 在GaAs的(110)、(001)和(111)A、(111)B等极性晶面上, 通过铜铟共溅-硒蒸镀的方法, 分布外延生长出(220/204)、(001)和(112)结晶取向的单晶CIS薄膜. 系统考察了CIS薄膜外延生长的结晶取向和表面微结构, 发现了这些CIS外延薄膜均需表面重构化而形成比表面能低的CIS(112)晶面, 结合晶体结构研究了各种晶面和比表面能的相关性. 通过各种衬底下不同结晶取向的CIS薄膜的太阳能电池组装, 发现当CIS薄膜生长具有(220/204)结晶取向时电池器件性能最好、效率最高, 说明可通过控制CIS薄膜的沉积条件和选用合适取向的衬底, 增加吸收层(220/204)的结晶取向, 从而显著提高CIS薄膜太阳电池的光电性能.

关键词: 外延CIS薄膜, 结晶取向, 太阳电池性能

Abstract: The mechanism of preferential orientation and surfacereconstruction of CIS thin films was systematically investigated. Epitaxial CISthin films with orientations of (220/204), (001) and (112) were deposited onGaAs(110), (001), (111)A and (111)B substrates, respectively, by using ametal-sputtering and Se-evaporation hybrid technique. The main epitaxialrelationship was found to be GaAs(110) // CIS(220), GaAs(001) // CIS(001), and GaAs(111) // CIS(112), respectively. The morphological and structuralproperties of CIS thin films were determined by scanning electron microscope,atomic force microscope and X-ray diffraction. The (220/204) and (001) surfacesof CIS thin films were found to be unstable under the growth conditions. The depositedsurfaces were mainly covered by the lowest specific surface-energy (112) facetregardless of its orientation. Sequence of the specific surface-energy for CISfacets was deduced, based on the geometrical analysis of the defects. Solarcells with preferential oriented CIS thin films as absorber layers werefabricated. The (220/204)-oriented film is characterized to have the best photovoltaicperformance, which is consistent with the charge transportation and separationpreferring along [220] direction. It indicates that higher efficiency of CIS thinfilm solar cells can be expected by enhancing (220/204) orientation through processoptimization.

Key words: epitaxial CIS thin films, orientation, CIGS solar cells

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