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无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

退火对提拉法生长Lu2Si2O7∶Ce晶体闪烁性能的影响

冯 鹤, 丁栋舟, 李焕英, 陆 晟, 潘尚可, 陈晓峰, 张卫东, 任国浩   

  1. （中国科学院 上海硅酸盐研究所 中试基地, 上海 201800）
  • 收稿日期:2009-01-15 修回日期:2009-03-10 出版日期:2009-09-20 网络出版日期:2009-09-20

Effect of Annealing Treatments on Scintillation Properties of Lu2Si2O7∶Ce Grown by Czochralski Method

FENG He, DING Dong-Zhou, LI Huan-Ying, LU Sheng, PAN Shang-Ke,
CHEN Xiao-Feng, ZHANG Wei-Dong, REN Guo-Hao   

  1. (R&D Center of Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China)
  • Received:2009-01-15 Revised:2009-03-10 Published:2009-09-20 Online:2009-09-20

PDF (PC)

1705

被引次数

1

摘要： Lu2Si2O7∶Ce (LPS∶Ce)表现出较高的光输出, 平均值约26000photons/MeV (简写为ph/MeV), 但通过提拉法获得的晶体发光效率很低. 实验对LPS∶Ce晶体进行了不同气氛下的退火, 研究退火条件对LPS∶Ce的发光效率等闪烁性能的影响. 发现在Ar气氛下退火对LPS∶Ce发光效率的提高没有作用, 在空气气氛下退火后可显著提高LPS∶Ce的发光效率. 通过不同退火工艺的比较, 确定了提高LPS∶Ce发光效率的最佳退火制度：空气气氛下, 退火温度1400℃, 退火时间根据样品的大小决定, 样品越大, 需要的退火时间越长. 同时讨论了退火过程中, LPS∶Ce吸收谱和UV-ray激发发射谱的变化趋势.

关键词: LPS∶Ce晶体, 退火制度, 发光效率, 吸收谱, 发射光谱

Abstract: Although the Lu2Si2O7∶Ce(LPS∶Ce) has a high light yield about 26000ph/MeV, the LPS∶Ce crystals grown by Czochralski(Cz) process usually display a low light yield. In present work, annealing treatments in different conditions were carried out on Cz grown LPS∶Ce with low luminescence efficiency, in order to investigate the effect of annealing treatment conditions on scintillation properties of LPS∶Ce, such as luminescence efficiency, absorption spectrum. It is found that annealing in argon atmosphere has a negligible effect on the scintillation properties of LPS∶Ce; annealing in air can dramatically improve the luminescence efficiency of LPS∶Ce. The optimized annealing mechanism is determined through the comparison between different annealing treatment: atmosphere of air; annealing temperature of 1400℃; annealing time depending on the dimension of the sample. The larger dimension is the longer annealing time. The change trend of charge transfer band in the absorption spectrum and UV-ray excitation and emission property of LPS∶Ce crystal are also discussed.

Key words: LPS∶Ce crystal, annealing mechanism, luminescence efficiency, absorption spectrum, emission spectrum

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