高技术陶瓷材料点缺陷化学和物理

doi:10.3724/sp.j.1077.2009.00417

摘要/Abstract

摘要： 无机材料点缺陷的研究具有基础性和前沿性特色，是当前高技术陶瓷发展中的一个新兴的技术支撑，具有诱人的应用前景，甚为世人瞩目.点缺陷结构与高技术陶瓷的物理和化学性能密切相关.本文就点缺陷能量、生成、缔合、点缺陷和界面间的互作用等化学和物理机制，点缺陷的电子学以及点缺陷工程研究中的最新进展等方面进行了综述.本文还就点缺陷对改善高技术陶瓷的电、磁、光、力和生物等性能所提供的美好前景进行了评述，以期有助于今后我国在无机材料领域原创性和开拓性研究的深入发展.

关键词: 点缺陷, 氧空位, Brouwer-Kroger-Vink线图, 点缺陷工程, 化学键, 高技术陶瓷

Abstract: he structure and behavior of defects, especial point defects are the key to understand the structural imperfection of structuresensitive advanced ceramics and related devices. A conception of chemistry and physics, especially for electronics on the point defect in the advanced ceramics is briefly reviewed in the present work. Several achieved examples of defect engineering and microscopic control technology for improving some ceramics/devices of electric, magnetic, optical, mechanical and/or biological behavior by defect improve/rebuild are discussed. The knowledge of how defects influence the ceramics/device performance is revealed and point defects provide very useful tools for understanding their basic characteristics and to open up their potentiality of the new advanced ceramics/devices in the near future.

Key words: point defect, oxygen vacancies, Brouwer-Kroger-Vink diagram, defect engineering, chemical bound, advanced ceramics

中图分类号:

TQ174

周志刚,唐子龙. 高技术陶瓷材料点缺陷化学和物理[J]. 无机材料学报, DOI: 10.3724/sp.j.1077.2009.00417.

ZHOU Zhi-Gang,TANG Zi-Long. Chemistry and Physics of Point Defects in Advanced Ceramics[J]. Journal of Inorganic Materials, DOI: 10.3724/sp.j.1077.2009.00417.

参考文献

1］Jost W. Diffusion und Chemische Reaktion in Festen Stoffen. Steinkopff, Dresden: Leipzing, 1937.
［2］Schmalzried H. Solid State Reactions. Weinheim: Verlag Chemie, 2^nd ed., 1981.
［3］Schmalzried H. Chemical Kinetics of Solids. Weinheim: VCH, 1995.
［4］West A R. Basic Solid State Chemistry. 2^nd ed., Chichester: Wiley, 1999.
［5］Kroger F A. Chemistry of Imperfect Crystals. Amsterdam: North Holland, 1964.
［6］Kroger F A, Vink V J. Solid State Physics. Seitz F, Turnbull D. NY: Academic Press, 1976,(3):307.
［7］Lidiard Alan B. Phys. Chem. Chem. Phys., 2003，5：2161-2163.
［8］Zhou Zhi-Gang, Tang Zi-Long. Defects in Chemical Sensors, in Encyclopedia of Sensors, C.A. Grimes et all Eds., USA: American Scientific Publishers, 2006, (2):305-331.
［9］Balian R, Kleman M, Poirier J-P. Physics of Defects, Oxford: NorthHolland Publishing Com., 1981.
［10］Smyth D M. The Defect Chemistry of Metal Oxides, Oxford: Oxford University Press, NY, 2000:61-91.
［11］Stoneham A M. Theory of Defects in Solids, Electronic Structure of Defects in Insulators and Semiconductors. Oxford: Clarendon Press, 1985.
［12］Tilley R J D. Defect Crystal Chemistry and its Applications, NY: Blackie, 1987:143, 155.
［13］Krger F A. The Chemistry of Imperfect Crystals, 2^nd ed., Amsterdam: NorthHolland, 1974, Chapter 7, 9, 13.
［14］Chiang Y M, Birnie Ⅲ D P, Kingery W D. Physical Ceramics, New York: Wiley, 1997.
［15］Lewis G V, Catlow C R A. Radiat. Eff.,1983,73(1-4):307-314.
［16］Sorensen O Toft. Nonstoichiometric Oxides, O. Toft Sorensen Ed., New York: Academic Press, 1981:1-22.
［17］Watts R K. Point Defects in Crystals. New York: John Wiley & Sons, 1977:109, 120
［18］Lax M. Symmetry Principles in Solid State and Molecular Physics, New York: John Wiley & Sons, 1974.
［19］Kelly A, Groves G W. Crystallography and Crystal Defects. London: Longman, 1970.
［20］Larson I, Milling A J. Surface Characterization Methods, Principles, Techniques, and Applications. New York: Marcel Dekker, Inc. 1999:143.
［21］Seiyama T. Chemical Sensor Technology. Tokyo: Kodansha, 1988, (1):1-5.
［22］Yamazoe N. Chemical Sensor Technology. S. Yamauchi.Kodansha, Tokyo,1990, (4):19-26.
［23］ZHOU ZhiGang, ZHAO Gang, WEI Ming, et al. Sensors and Actuators, 1989,19:71.
［24］Zhou ZhiGang, Tang ZiLong, Zhang ZhongTai. Sensors and Actuators B: Chemical, 2003, 93:356.
［25］Brouwer G. Philips. Res. Reports, 1954, 9: 366.
［26］Brouwer G. Philips. Res. Reports, 1957,12: 415.
［27］Waser R. J. Am. Ceram. Soc., 1991,74(8): 1934-1940.
［28］Raymond M V, Smyth D M. J. Phy. Chem.Solids,1996,57(10):1507-1511.
［29］Chan NH, Sharma R K, Smyth D M. J. Am. Ceram. Soc.,1981,64(9):556-562.
［30］Chan NH, Sharma R K, Smyth D M. J. Am. Ceram. Soc.,1982,65(3):167-170.
［31］周志刚，李从周.铁电原理，（电介质物理学，殷之文主编），北京: 科学出版社，1989.
［32］Wouters DJ, Maes H E. Microelectrics & Reliability, 1996,36(1112):1763-1766.
［33］Lupascu Doru C, Genenko Yuri A, Balke Nina. J. Am. Ceram. Soc., 2006, 89(1): 224-229.
［34］Warren W L, Dimos D, Pike G E, et al. Appl. Phys. Lett., 1995, 67(6):866-868.
［35］Wang Junling, TrolierMcKinstryb Susan. Appl. Phy. Lett., 2006, 89(17): 172906-1-3.
［36］Schloss Lawrence F, McIntyre Paul C, Hendrix Bryan C, et al. Appl. Phy. Lett., 2002，81(17):3218-3220.
［37］Whlecke M, Corradi G, Betzler K. Appl. Phys. B:Lasers and Optics, 1996,63: 323-330.
［38］Abdi F, Fontana M D, Aillerie M, et al. Appl. Phys. A: Materials Science & Processing, 2006,83(10):427-434.
［39］Sobolev N A. Physica B:Condensed Matter，2007, 401402: 10-15.
［40］Ledentsov N N, Bimberg D. Journal of Crystal Growth, 2003, 255(1-2):68-80.
［41］Prokes Sharka M, Gole Janes L, Chen Xiaobo, et al. Adv. Funct. Mater., 2005,15(1):161-167.
［42］Funk S, Burghaus U. Phys. Chem. Chem. Phys., 2006, 8: 4805-4813.
［43］Kossoy Anna, Feldman Yishay, Wachtel Ellen, et al. Adv. Funct. Mater., 2007, 17(14):2393-2398.
［44］Shahid P, Lundgrena Rylan J, Lachlan M D, et al. Journal of Solid State Chemistry, 2007,180(12): 3333-3340.
［45］Sudakara C, Kharel P, Suryanarayanan R, et al. Journal of Magnetism and Magnetic Materials, 2008, 320(15): L31-L36.
［46］Debernardi A, Fanciulli M. Physica B, 2007,401-402: 451-453.
［47］Yang KC, Shen P, Gan D. Journal of Solid State Chemistry, 2006,179(11): 3478-3483 .
［48］Kuwabara Akihide. Science and Technology of Advanced Materials, 2007, 8(16): 519-523.
［49］Cormack A N, Freeman C M, Catlow C R A, et al. Defect Structures and Energetics in Nonstoichiometric Rutile, Advances in Ceramics. Westerville, OH: American Ceramic Society, 1987,(23): 283-291.
［50］Kofstad P, Hed AZ. J. Am. Ceram. Soc.,1967,50(12): 681-682.
［51］Shannon R D. Acta Crystallogr. A, 1976,32: 751-767.
［52］Sobolev M M, Cirlin G E,Tonkikh A A. Physica B,2007,401-402:576-579.
［53］Karen Pavel. Journal of Solid State Chemistry, 2006,79(10): 3167-3183. ［54］Roth E G, Holland O W, Venezia V C, et al. Journal of Electronic Materials, 1997,26(11):1349-1354.
［55］Kuhnke M, Fretwurst E, Lindstroem G. Nuclear Instruments and Methods in Physics Research B, 2002, 186(1-4):144-151.
［56］Mac Evoy B C. Solid State Phenomena,1997, 57-58:221.
［57］Mac Evoy B C, Santocchia A, Hall G. Physica B, 1999, 273-274:1045-1049.
［58］Tuller Harry L. Electrochimica Acta, 2003,48(20-22): 2879-2887.
［59］Waser R. Nanoelectronics and Information Technology. Weinheim: WileyVCH, 2003.
［60］Yan Qingfeng, Wang Likui, Zhao X S. Adv. Funct. Mater., 2007,17(18): 3695-3706.
［61］Estreicher Stefan k. Materials Today, 2003,6(6):26-35.
［62］PardoYissar V,Katz E, Wasserman J, et al. J. Am. Chem. Soc., 2003, 125(3): 622-623.
［63］Eglitis RI, Kotomin E A, Borstel G. Computational Materials Science, 2004, 30(3-4): 376-382.
［64］Duque Carlos, Stashans Arvids. Physica B, 2003,336(3-4): 227-235.
［65］Spaeth JM, Overhof H. Point Defect in Semiconductors and Insulators, Determination of Atomic and Electronic Structure from Paramagnetic Hyperfine Interactions. BerlinHeidelberg: SpringerVerlag, 2003.
［66］Dierolf V. Electronic Defects States in Alkali Halides, BerlinHeidelberg: SpringerVerlag, 2003.
［67］Newnham R E. Properties of Materials, Anisotropy, Symmetry, Structure, Oxford: Oxford University Press, 2005. ［68］Catlow C R A. Defect and Disorder in Crystalline and Amorphous Solids, Dordrecht, The Netherlands: Kluwer Academic Publisher, 1994. ［69］Lam Robert, Langet Thomas, Greedan John E. Journal of Solid State Chemistry, 2003,171(1-2):317-323.
［70］Mueller R, Gross D, Lupascu D C. Computational Materials Science, 2006,35(1):42-52.
［71］Moritani Kimikazu, Takagi Ikuji, Moriyama Hirotake. Journal of Nuclear Materials, 2004, 326(2-3):106-113.
［72］Grundy A Nicholas, Povoden E, Ivas T, et al. Calphad, 2006, 30(1):33-41.
［73］Shankar N G, Zhong Z W. Microelectronics Journal, 2005, 36(8):718-724.
［74］Allan N L, Barrera G D, Lavrentiev M Yu, et al. Computational Materials Science, 2006, 36(1-2):42-48.

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