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无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

电泳沉积法制备Ba0.6Sr0.4TiO3厚膜及其电学性能研究

符云飞, 樊慧庆, 邓永丽, 陈晋   

  1. 西北工业大学材料学院, 凝固技术国家重点实验室, 西安 710072
  • 收稿日期:2007-08-13 修回日期:2007-10-25 出版日期:2008-07-20 网络出版日期:2008-07-20

Preparation and Electrical Properties of BST Thick Film Deposited by Electrophoretic Deposition Method

FU Yun-Fei, FAN Hui-Qing, DENG Yong-Li, CHEN Jin   

  1. State Key Laboratory of Solidification Processing, School of Materials Science
    and Engineering, Northwestern Polytechnical University, Xi’an 710072, China
  • Received:2007-08-13 Revised:2007-10-25 Published:2008-07-20 Online:2008-07-20

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摘要： 采用电泳沉积法在Pt/Ti/SiO2/Si基底上制备了厚度为33μm的Ba0.6Sr0.4TiO3(BST40)厚膜, 研究了其介电调谐特性、漏电流特性和铁电特性. 实验结果表明: 采用水热法制备纳米BST40粒子, 经250MPa高压压制, 950℃热处理后, BST40厚膜可形成完整的立方钙钛矿结构且表面致密、无裂纹. ε-V特性表明, 1kHz时厚膜调谐率可达59.2％. I-V特性表明, 当电压从--25～25V变化时, 漏导电流<100μA/cm2. 测量了在1kHz, 不同温度下厚膜的电滞回线. 在0℃时, 其剩余极化强度为1.06μC/cm2.



关键词: BST厚膜, 电泳沉积, 调谐率, 电滞回线

Abstract: Ba0.6Sr0.4TiO3 (BST40) thick film with thickness of 33μm was prepared by electrophoretic deposition method on Pt/Ti/SiO2/Si substrate using the BST40 nano powders as precursor. A high pressure treatment process was introduced in order to increase the density and decrease the sintering temperature of the film. The composition and surface morphology of the BST40 thick film were characterized. The ε-V curve of the BST40 thick film was measured. The leakage current density was tested and hysteresis loops of the thick film were measured at different temperatures. The results show that a dense and no crack surface are formed after sintering at 950℃. A tunability of 59.2％ is calculated according to the ε-V curve. The leakage current is less than 100μA/cm 2 when the applied voltage shifts from --25V to 25V. The remnant polarization is 1.06μC/cm2 at the temperature of 0℃ and the frequency of 1kHz.



Key words: BST thick film, EPD, tunability, remnant polarization

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