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无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

掺硼四面体非晶碳膜的微观结构及光谱表征

张化宇1, 檀满林1, 韩杰才1,2, 朱嘉琦2, 贾泽纯2   

  1. (1. 哈尔滨工业大学深圳研究生院, 深圳 518055; 2. 哈尔滨工业大学复合材料与结构研究所, 哈尔滨 150001)
  • 收稿日期:2007-02-06 修回日期:2007-03-28 出版日期:2008-01-20 网络出版日期:2008-01-20

Spectroscopic Characterization of Boron Doped Tetrahedral Amorphous Carbon

ZHANG Hua-Yu1, TAN Man-Lin1, HAN Jie-Cai1,2, ZHU Jia-Qi2, JIA Ze-Chun2   

  1. (1. Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, China; 2. Center for Composite Materials, Harbin Institute of Technology, Harbin 150001, China)
  • Received:2007-02-06 Revised:2007-03-28 Published:2008-01-20 Online:2008-01-20

PDF (PC)

2456

被引次数

8

摘要： 分别采用过滤阴极真空电弧技术制备了不同含硼量四面体非晶碳(ta-C:B)膜, 并用X射线光电子能谱(XPS)、Raman光谱对薄膜的微观结构和化学键态进行了研究. XPS分析表明薄膜中B主要以石墨结构形式存在, 随着B含量的增加, sp3杂化碳的含量逐渐减小, Ta-C:B膜的Raman谱线在含硼量较高时, 其D峰和G峰向低频区偏移, 且G峰的半峰宽变窄, 表明B的引入促进了sp2杂化碳的团簇化, 减小了原子价键之间的变形, 从而降低了薄膜的内应力．

关键词: 四面体非晶碳(ta-C), XPS, Raman光谱

Abstract: A set of boron doped tetrahedral amorphous carbon (ta-C:B) films were prepared in a filtered cathodic vacuum arc system using boron mixed graphite as targets with weight percentage ranging from 0 to 15%. The chemical bonding states of ta-C:B were studied by X-ray photoelectron spectroscope. The result shows that B is mainly threefold coordinated and the fraction of sp3 hybridized carbon decreases in magnitude with increasing boron content. Raman analysis also shows that the introduction of B in the ta-C:B films facilitates the clustering of sp2 carbon sites which reduces the bonding distortion and intrinsic stress of the films.

Key words: tetrahedral amorphous carbon, XPS, Raman spectrum

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