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真空蒸发法制备PbI2多晶薄膜研究

李玉红1; 张弘1; 李振生1; 李丹民1,2; 贺德衍1   

  1. 1. 兰州大学物理科学与技术学院, 兰州 730000; 2. 兰州物理所, 兰州 730000
  • 收稿日期:2004-08-16 修回日期:2004-10-10 出版日期:2005-09-20 网络出版日期:2005-09-20

Polycrystalline PbI2 Thin Films Deposited by Vacuum Evaporation

LI Yu-Hong1; ZHANG Hong1; LI Zhen-Sheng1; LI Dan-Min1,2; HE De-Yan1   

  1. 1.School of Physics Science and Technology; Lanzhou University; Lanzhou 730000; China; 2.Lanzhou Institute of Physics; Lanzhou 730000, China
  • Received:2004-08-16 Revised:2004-10-10 Published:2005-09-20 Online:2005-09-20

摘要: 用真空蒸发法在玻璃衬底上制备了PbI2多晶薄膜,对样品的微结构、表面形貌、化学组分及电阻率进行了测试分析.结果表明,样品具有良好的多晶结构,并沿六角密堆积结构的c轴向高度择优取向.室温下样品暗电导率为3.09×10-11(Ω·cm)-1,电导激活能为0.78eV.

关键词: PbI2多晶薄膜, 真空蒸发, 辐射探测

Abstract: Lead iodide (PbI2) polycrystalline thin films were deposited on glass substrates by vacuum evaporation technique. The structure, surface morphology and composition of the films were characterized by using X-ray diffraction, scanning electron microscope, X-ray photoelectron spectrometer. The results indicate that the films are polycrystalline with a preferred orientation along (001). The measurement of conductivity as a function of temperature shows that the dark conductivity of the film at room temperature is as low as 3.09×10-11(Ω·cm)-1, and the activation energy is 0.78eV.

Key words: polycrystalline PbI2 thin film, vacuum evaporation, radiation detect

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