高级检索
无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

生长温度梯度对Bi4Ge3O12晶体辐照损伤的影响

肖海斌; 胡关钦; 徐力   

  1. 中国科学院上海硅酸盐研究所 上海 201800
  • 收稿日期:2002-03-05 修回日期:2002-04-27 出版日期:2003-03-20 网络出版日期:2003-03-20

Influence of Temperature Gradient on Radiation Damage of BGO Crystals

XIAO Hai-Bin; HU Guan-Qin; XU Li   

  1. Shanghai Institute of Ceramics; Chinese Academy of Sciences; Shanghai 200050; China
  • Received:2002-03-05 Revised:2002-04-27 Published:2003-03-20 Online:2003-03-20

PDF (PC)

1133

摘要： 研究了两类不同条件下生长的Bi4Ge3O12晶体紫外辐照前后的光学透射谱和能量分辨率,研究结果指出:第一类晶体(高温度梯度生长)经紫外辐照后,在480nm透过率有明显下降(20％以上),能量分辨率也明显变差(改变5％以上).而第二类晶体(低温度梯度生长)经紫外辐照后,其透射谱以及能量分辨率基本不变.从晶体缺陷角度讨论了造成两类不同晶体抗辐照性能存在差别的原因.

关键词: Bi4Ge3O12晶体, 温度梯度, 辐照损伤, 能量分辨率

Abstract: In this work, we grew two types of Bi4Ge3O12 (BGO) crystals in different temperature gradient by
Bridgmen-Stockbarger technology and compared the optical transmissions and energy resolutions of the two types of BGO crystals before and after
ultraviolet irradiation. It was found that the optical transmissions and energy resolutions of the two types of BGO crystals are similar before
UV-irradiation. After UV-irradiation the optical transmissions at 480nm of the first type of BGO crystals which were grown in high temperature
gradient cut down about 20% and their energy resolutions obviously changed bad from about 12% to 18%. But the optical transmissions and energy
resolutions of the second type of BGO crystals which were grown in low temperature gradient keep unchanged on the whole. After 250℃/4h
annealing, the optical transmissions and energy resolutions of the second type of BGO crystals can completely be recovered. Whereas the optical
transmissions and energy resolutions of the first type of BGO crystals can’t completely be recovered until through 800℃/8h annealing. The
thermoluminescence curves of the two types of BGO crystals show that there is a luminescence peak at 85℃ for second type of BGO crystal,
whereas for the first type of BGO crystals, besides at 85℃, there are also two luminescence peaks at 130℃ and at 170℃ which
may show that there exist defects with deeper traps in the first type of BGO crystals. The reason for the difference between the first and second type
of BGO crystals may be that if the temperature drop dawn too fast during crystal growing, the defects in the melt can not spread out to the surface and so the
defects easily exist in the first type of BGO crystals.

Key words: Bi4Ge3O12crystals, temperature gradient, radiation damage

中图分类号: